Strain-Induced Diffusion in Strained Sige/Si Heterostructures

MRS Online Proceedings Library volume 648, Article number: 112 (2000) Cite this article

Abstract

Diffusivity of a strained heterostructure was theoretically investigated, and general diffusion equations with strain potential were deduced. There was an additional diffusivity by the strain potential gradient as well as by the concentration gradient. The strain-induced diffusivity was a function of concentration, and its temperature dependence was formulated. The activation energy of the strain-induced diffusivity was measured by high-resolution transmission electron microscopy. This result can be generally applied for the investigation of the diffusion in strained heterostructures.

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Affiliations

  1. Dept. of Mater. Sci. & Eng., KAIST, 337-1 Gusung-dong, Yusung-ku, Daejon, 305-701, Korea

    Y. S. Lim & J. Y. Lee

  2. SiGe Device Team, ETRI, 161 Kajong-dong, Yusung-ku, Daejon, 305-350, Korea

    H. S. Kim

  3. Surface Analysis Group, KRISS, 1 Doryong-dong, Yusung-ku, Daejon, 305-340, Korea

    D. W. Moon

Authors
  1. Y. S. Lim
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  2. J. Y. Lee
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  3. H. S. Kim
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  4. D. W. Moon
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Correspondence to Y. S. Lim.

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Lim, Y.S., Lee, J.Y., Kim, H.S. et al. Strain-Induced Diffusion in Strained Sige/Si Heterostructures. MRS Online Proceedings Library 648, 112 (2000). https://doi.org/10.1557/PROC-648-P11.2

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