Dynamics of Ga Clusters on GaAs(001) Surface

Abstract

Dynamics of Ga clusters and GaAs epitaxial growth on a GaAs (001) surface were successfully observed by a system in which scanning tunneling microscopy (STM) and molecular beam epitaxy (MBE) were incorporated into one unit rather than in separate chambers. With the substrate temperature of 528°C, reflection high-energy diffraction (RHEED) patterns showed a (4×6) Ga-stabilized surface reconstruction and dynamics of steps and islands were clearly observed. The detaching and attaching of small Ga clusters might cause the change of steps and islands. It seems that the small Ga clusters migrated with the diameter of about 0.8 to 1.2 nm and around the steps and islands. These clusters could be observed only when they were detached from or attached to the steps and islands. Moreover, even under the substrate temperature of 440oC and the As4 partial pressure of 2×10−6 torr, STM images were clearly observed. After 0.1 ML Ga was additionally supplied to the sample by migration enhanced epitaxy mode, step flow growth occurred, resulting in an additional GaAs layer grown on the B-step side. Moreover, the c(4×4) As-stabilized surface reconstruction was moderate. It seems that there is an equilibrium additional layer of As amorphous adatoms on the c(4x4) surface reconstructions.

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References

  1. 1.

    D.K. Biegelsen, R.D. Bringans, J.E. Northrup, and L.E. Swartz, Phys.Rev. B 41, 5701 (1990)

    CAS  Article  Google Scholar 

  2. 2.

    I. Tanaka, S. Ohkouchi, T. Kato, and F. Osaka, J.Vac.Sci.&Technol. B9, 2277 (1991)

    Article  Google Scholar 

  3. 3.

    B.G. Orr, C.W. Snyder, and M. Johnson, Rev.Sci. Instrum. 62, 1400 (1991)

    CAS  Article  Google Scholar 

  4. 4.

    M. Tanimoto, J. Osaka, T. Takegami, S. Hirono, and K. Kanisawa, Ultramicroscopy 42/44, 1275 (1992)

    Article  Google Scholar 

  5. 5.

    T. Hashizume, Q. Xue, J. Zhou, A. Ichimiya, and T. Sakurai, Phys.Rev.Lett. 73, 2208 (1994)

    CAS  Article  Google Scholar 

  6. 6.

    A.R. Avery, H.T. Dobbs, D.M. Holmes, B.A. Joyce, and D.D. Vvedensky, Phys.Rev.Lett. 79, 3938 (1997)

    CAS  Article  Google Scholar 

  7. 7.

    M. Itoh, G.R. Bell, A.R. Avery, T.S. Jones, B.A. Joyce, and D.D. Vvedensky, Phys.Rev.Lett. 81, 633 (1998)

    CAS  Article  Google Scholar 

  8. 8.

    H. Yamaguchi and Y. Horikoshi, Jpn.J.Appl.Phys. 28, L1456 (1989)

    CAS  Article  Google Scholar 

  9. 9.

    Y. Horikoshi, H. Yamaguchi, F. Briones, and M. Kawashima, J.Cryst.Growth 105, 326 (1990)

    CAS  Article  Google Scholar 

  10. 10.

    H. Yamaguchi and Y. Horikoshi, Jpn.J.Appl.Phys. 30, 802 (1991)

    CAS  Article  Google Scholar 

  11. 11.

    S. Tsukamoto and N. Koguchi, Tenth International Conference on Molecular Beam Epitaxy, Cannes, France, August 31-September 4, 1998, pp. 116–117; J.Cryst.Growth 201/202, 118 (1999)

    Google Scholar 

  12. 12.

    S. Tsukamoto and N. Koguchi, J.Cryst.Growth 209, 258 (2000)

    CAS  Article  Google Scholar 

  13. 13.

    A.R. Avery, D.M. Homes, J.L. Sudijono, T.S. Jones, and B.A. Joyce, Surf.Sci. 323, 91 (1995)

    CAS  Article  Google Scholar 

  14. 14.

    S. Tsukamoto and N. Koguchi, Jpn.J.Appl.Phys., 33, L1185 (1994); J.Cryst.Growth 150, 33 (1995)

    CAS  Article  Google Scholar 

  15. 15.

    Q. Xue, T. Hashizume, J.M. Zhou, T. Sakata, T. Ohno, and T. Sakurai, Phys.Rev.Lett. 74, 3117 (1995)

    Article  Google Scholar 

  16. 16.

    A. Ichimiya, Y. Tanaka, and K. Ishiyama, Phys.Rev.Lett. 76, 4721 (1996)

    CAS  Article  Google Scholar 

  17. 17.

    A. Ichimiya, Y. Tanaka, and K. Hayashi, Surf.Sci. 386, 182 (1997)

    CAS  Article  Google Scholar 

  18. 18.

    M.D. Johnson, K.T. Leung, A. Birch, and B.G. Orr, J.Cryst.Growth 174, 572 (1997)

    CAS  Article  Google Scholar 

  19. 19.

    C.T. Foxon, B.A. Joyce, and M.T. Norris, J.Cryst.Growth 49, 132 (1980)

    CAS  Article  Google Scholar 

  20. 20.

    Y. Kobayashi, K. Uwai, and N. Kobayashi, Jpn.J.Appl.Phys. 34, 3008 (1995)

    CAS  Article  Google Scholar 

  21. 21.

    T. Ohachi, J.M. Feng, and K. Asai, J.Cryst.Growth 211, 405 (2000)

    CAS  Article  Google Scholar 

  22. 22.

    T. Ito, K. Shiraishi, and T. Ohno, Appl.Surf.Sci. 82/83, 208 (1994)

    CAS  Article  Google Scholar 

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Correspondence to Shiro Tsukamoto.

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Tsukamoto, S., Koguchi, N. Dynamics of Ga Clusters on GaAs(001) Surface. MRS Online Proceedings Library 648, 1120 (2000). https://doi.org/10.1557/PROC-648-P11.20

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