Large and Stable Field-Emission Current from Heavily Si-Doped AlN Grown by MOVPE

MRS Online Proceedings Library volume 621, Article number: 5121 (2000) Cite this article

Abstract

We investigated electron field emission (FE) from heavily Si-doped AlN grown by metalorganic vapor phase epitaxy. We found that, as the Si-dopant density increases, the threshold electric field decreases, which indicates that electrons are supplied to the surface effectively as a result of Si doping. We show that heavily Si-doped AlN has a maximum FE current of 347 μA (the maximum current density of 11 mA/cm2), stable FE current (fluctuation: 3%), and a threshold electric field of 34 V/μm. We observed visible light emission (luminance: about 1200 cd/m2) from phosphors excited by the field-emitted electrons.

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  1. NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, 243-0198, Japan

    Makoto Kasu & Naoki Kobayashi

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  1. Makoto Kasu
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  2. Naoki Kobayashi
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Correspondence to Makoto Kasu.

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Kasu, M., Kobayashi, N. Large and Stable Field-Emission Current from Heavily Si-Doped AlN Grown by MOVPE. MRS Online Proceedings Library 621, 5121 (2000). https://doi.org/10.1557/PROC-621-R5.12.1

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