The influence of hydrogen in a precursor on excimer laser crystallization behavior was investigated. The crystal orientation and lattice constant of polycrystalline silicon films were analyzed by X-ray diffraction measurement. An intensity ratio of 111 to 220 was used as an index of the (111) preferred orientation. A randomly oriented film with an index of 2 at lower energy density changed to the highly (111) oriented phase with an index of more than 15 at higher energy density. It was observed in the PE-CVD films that increasing the hydrogen in the precursor films decreased the orientation index. The lattice constant of the laser-annealed PE-CVD silicon was found to be larger than that of the PVD silicon and to decrease with an increase in laser energy density. The network structure of as-deposited PVD film with less hydrogen content was denser than that of as-deposited PE-CVD. The network structure of the precursor strongly affected the crystal growth, and the structure of the ELC poly-Si was still affected by the precursors, even though the hydrogen content decreased after laser annealing.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
S. Chen and I. C. Hsieh, Solid State Tech., 113 (1996).
K. Kitahara, S. Murakami, A. Hara, and K. Nakajima, J. Appl. Phys. Lett., 72, 2436 (1998).
K. Park, J. Jeon, C. Park, M. Lee, M. Han, and K. Choi, J. Appl. Phys. Lett., 75, 460 (1999).
H. Kuriyama, T. Nohda, Y. Aya, T. Kuwahara, K. Wakisaka, S. Kiyama, and S. Tsuda, Jpn. J. Appl. Phys., 33, 5657 (1994).
M. Takahashi, M. Saitoh, K. Suzuki, and K. Ogata, (2000) (in press).
E. Demaray, SID 99 Digest p.853 (1999).
About this article
Cite this article
Tamura, T., Ogata, K., Takahashi, M. et al. Crystal Growth of Laser Annealed Polycrystalline Silicon as a Function of Hydrogen Content of Precursors. MRS Online Proceedings Library 621, 951 (2000). https://doi.org/10.1557/PROC-621-Q9.5.1