Crystallization of Amorphous Si Thin Films Using a Viscous Ni Solution


We prepared a viscous Ni solution by dissolving NiCl2 in 1N HCl and mixing it with propylene glycol to control the amount of Ni on Si surface. A uniform film was formed after spin coating and oven dry. The a-Si films deposited by LPCVD with Si2H6 gas were crystallized more uniformly and more reproducibly. And the crystallization was enhanced from 600°C, 30h to 500°C, 10h. The surface roughness of poly-Si film crystallized with the viscous solution was much smaller than that of poly-Si film crystallized from Ni/Si direct contact. The TFT mobility was improved even though the crystallization temperature was much lower.

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  1. [1]

    S. W. Lee and S. K. Joo, IEEE Electron Device Lett., 17, 160 (1996)

    CAS  Article  Google Scholar 

  2. [2]

    D. K. Sohn, J. N. Lee, S. W. Kang and B. T. Ahn, Jpn. J. App. Phys., 35, 1005 (1996)

    CAS  Article  Google Scholar 

  3. [3]

    S. Y. Yoon, K. H. Kim, C. O. Kim, J. Y. Oh and J. Jang, J. Appl. Phys., 82, 5865 (1997)

    CAS  Article  Google Scholar 

  4. [4]

    A. K. Kalkan and S. J. Fonash, J. Electrochem. Soc., 144, L297 (1997)

    CAS  Article  Google Scholar 

  5. [5]

    D. K. Sohn, S. C. Park, S. W. Kang and B. T. Ahn, J. Electrochem. Soc., 144, 3592 (1997)

    CAS  Article  Google Scholar 

  6. [6]

    Z. Jin, G. A. Bhat, M. Yeung, H. S. Kowk and M. Wong, J. Appl. Phys., 84, 194 (1998)

    CAS  Article  Google Scholar 

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Correspondence to Jin Hyung Ahn.

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Ahn, J.H., Kim, S.C. & Ahn, B.T. Crystallization of Amorphous Si Thin Films Using a Viscous Ni Solution. MRS Online Proceedings Library 621, 911 (2000).

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