Simulation of H Behavior in p-GaN(Mg) at Elevated Temperatures

Abstract

The behavior of H in p-GaN(Mg) at temperatures >400°C is modeled by using energies and vibration frequencies from density-functional theory to parameterize transport and reaction equations. Predictions agree semiquantitatively with experiment for the solubility, uptake, and release of the H when account is taken of a surface barrier.

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Correspondence to S. M. Myers.

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Myers, S.M., Wright, A.F., Petersen, G.A. et al. Simulation of H Behavior in p-GaN(Mg) at Elevated Temperatures. MRS Online Proceedings Library 595, 94 (1999). https://doi.org/10.1557/PROC-595-F99W9.4

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