High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer

Abstract

Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gassource molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm2/Vs with carrier sheet densities of 6.1 × 1012 cm−2, 6.0 × 1012 cm−2, and 5.8 × 1012 cm−2 at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

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Correspondence to M. J. Jurkovic.

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Jurkovic, M.J., Li, L.K., Turk, B. et al. High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer. MRS Online Proceedings Library 595, 81 (1999). https://doi.org/10.1557/PROC-595-F99W8.1

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