High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer


Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gassource molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm2/Vs with carrier sheet densities of 6.1 × 1012 cm−2, 6.0 × 1012 cm−2, and 5.8 × 1012 cm−2 at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

This is a preview of subscription content, access via your institution.


  1. 1.

    A. R. Smith, R. M. Feenstra, D. W. Greve, M.-S. Shin, M. Skowronski, J. Neugebauer, J. E. Northrup, Appl. Phys. Lett., 72, 2114 (1998).

    CAS  Article  Google Scholar 

  2. 2.

    M. A. Khan, Q. Chen, M. S. Shur, B. T. Dermott, J. A. Higgins, J. Burm, W. Schaff, L. F. Eastman, Electron. Lett., 32, 357, (1996).

    CAS  Article  Google Scholar 

  3. 3.

    Y.-F. Wu, B. P. Keller, P. Fini, S. Keller, T. J. Jenkins, L. T. Kehias, S. P. Denbaars, U. K. Mishra, Electron Dev. Lett., 19, 50 (1998).

    CAS  Article  Google Scholar 

  4. 4.

    R. Li, S. J. Cai, L. Wong, Y. Chen, K. L. Wang, R. P. Smith, S. C. Martin, K. S. Boutros, J. M. Redwing, Electron Dev. Lett., 20, 323 (1999).

    CAS  Article  Google Scholar 

  5. 5.

    S. T. Sheppard, K. Doverspike, W. L. Pribble, S. T. Allen, J. W. Palmour, L. T. Kehias, T. J. Jenkins, Electron Dev. Lett., 20, 161 (1999).

    CAS  Article  Google Scholar 

  6. 6.

    R. Gaska, M.S. Shur, A. D. Bykhovski, A. O. Orlov, G. L. Snider, Appl. Phys. Lett, 74, 287 (1999).

    CAS  Article  Google Scholar 

  7. 7.

    T. Wang, Y. Ohno, M. Lachab, D. Nakagawa, T. Shirahama, S. Sakai, H. Ohno, Appl. Phys. Lett., 74, 3531 (1999).

    CAS  Article  Google Scholar 

  8. 8.

    C. R. Elsass, I. P. Smorchkova, B. Heying, E. Haus, P. Fini, K. Maranowski, J. P. Ibbeston, S. Keller, P. M. Petroff, S. P. Denbaars, U. K. Mishra, J. S. Speck, Appl. Phys. Lett., 74, 3528 (1999).

    CAS  Article  Google Scholar 

  9. 8.

    I. P. Smorchkova, C. R. Elsass, J. P. Ibbeston, R. Vetury, B. Heying, P. Fini, E. Haus, S. P. Denbaars, J. S. Speck, U. K. Mishra, J. Appl. Phys., 86, 4520 (1999).

    CAS  Article  Google Scholar 

  10. 10.

    L. K. Li, J. Alperin, W. I. Wang, D. C. Look, D. C. Reynolds, J. Vac. Sci. Technol. B, 16, 1275 (1998).

    CAS  Article  Google Scholar 

  11. 11.

    J. B. Webb, H. Tang, S. Rolfe, J. A. Bardwell, Appl. Phys. Lett., 75, 953 (1999).

    CAS  Article  Google Scholar 

  12. 12.

    H. Amano, M. Iwaya, T. Kashima, M. Katsuragawa, I. Akasaki, J. Han, S. Hearne, J. A. Floro, E. Chason, J. Figiel, Jpn. Journ. Appl. Phys., Part 2, 37, L1540 (1998).

    Article  Google Scholar 

  13. 13.

    W. I. Wang, Appl. Phys. Lett., 44, 1149 (1984).

    CAS  Article  Google Scholar 

  14. 14.

    J. S. Harris, S. M. Koch, S. J. Rosner, Mater. Res. Soc. Symp. Proc., 91, 3 (1987).

    CAS  Article  Google Scholar 

  15. 15.

    H. Kroemer, J. Crystal Growth, 81, 193 (1987).

    CAS  Article  Google Scholar 

  16. 16.

    H. Amano, N. Sawaki, I. Akasaki, Y. Toyoda, Appl. Phys. Lett., 48, 353 (1986).

    CAS  Article  Google Scholar 

  17. 17.

    D. C. Renolds, D. C. Look, J. Appl. Phys., 80, 594 (1996).

    Article  Google Scholar 

  18. 18.

    K. C. Zeng, J. Y. Lin, H. X. Jiang, W. Yang, Appl. Phys. Lett., 74, 3821 (1999).

    CAS  Article  Google Scholar 

Download references

Author information



Corresponding author

Correspondence to M. J. Jurkovic.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Jurkovic, M.J., Li, L.K., Turk, B. et al. High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer. MRS Online Proceedings Library 595, 81 (1999). https://doi.org/10.1557/PROC-595-F99W8.1

Download citation