The atomic structure of extended defects in GaN

MRS Online Proceedings Library volume 595, Article number: 54 (1999) Cite this article

Abstract

GaN layers contain large densities (1010 cm−2) of threading dislocations, nanopipes, (0001) and {1120} stacking faults, and {1010} inversion domains. Three configurations have been found for pure edge dislocations, mainly inside high angle grain boundaries where the 4 atom ring cores can be stabilized. Two atomic configurations, related by a 1/6 < 1010 > stair rod dislocation, have been observed for the {1120} stacking fault in (Ga-Al)N layers. For the {1010} inversion domain boundaries, a configuration corresponding to the Holt model was observed, as well as another with no N-N or Ga-Ga bonds.

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References

  1. 1.

    Amano H., Kito M., Hiramatsu K., Aksaki I., 1989, Jpn. J. Appl. Phys. 28, L2112.

    CAS  Article  Google Scholar 

  2. 2.

    Ponce F.A., Major S.J., Plano W.E., and Welch D.F., 1994, Appl. Phys. Lett. 65, 2302

    CAS  Article  Google Scholar 

  3. 3.

    Nakamura S., Senoh M., Nagahama S., Iwasa N., Yamada T., Mitsushita T., Kiyoku H., and Sugimoto Y., 1996, Jpn. J. Appl. Phys. 35, L74.

    CAS  Article  Google Scholar 

  4. 4.

    Lester S.D., Ponce F.A., Crawford M.G., and Steigewald D.A., 1995, Appl. Phys. Lett., 66, 1249.

    CAS  Article  Google Scholar 

  5. 5.

    Vermaut P., Ruterana P., Nouet G., Salvador A., Botchkarev A., and Morkoç H., 1995, Inst. Phys. Conf. Ser., 146, 289.

    CAS  Google Scholar 

  6. 6.

    Rouvière J.L., Arlery M., and Bourret A., 1997, Inst. Phys. Conf. Ser. 157, 173.

    Google Scholar 

  7. 7.

    Tanaka S., Kern R.S., and Davis R.F., 1995, Appl. Phys. Lett. 66, 37.

    CAS  Article  Google Scholar 

  8. 8.

    Sverdlov B.N., Martin G.A., Morkoç H. and Smith D.J., 1995, Appl. Phys. Lett. 67, 2063.

    CAS  Article  Google Scholar 

  9. 9.

    Rouvière J.L., Arlery M., Niebuhr R., and Bachem K., 1995, Inst. Phys. Conf. Ser. 146, 285.

    Google Scholar 

  10. 10.

    Vermaut P., Ruterana P., Nouet G., and Morkoç H., 1997, Philos. Mag. A75, 239.

    Article  Google Scholar 

  11. 11.

    Vermaut P., Ruterana P., Nouet G., 1997, Philos. Mag. A76, 1215.

    Article  Google Scholar 

  12. 12.

    Vermaut P., Ruterana P., Nouet G., Salvador A., and Morkoç H., 1997, Inst. Phys. Conf. Ser., 157, 183.

    CAS  Google Scholar 

  13. 13.

    Ruterana P., Potin V., Béré A., Barbaray B., Nouet G., Hairie A., Paumier E., Salvador A., Botchkarev A., and Morkoç H., Phys. Rev. 1999, B59, 15917–15925

    Article  Google Scholar 

  14. 14.

    Xin Y., Pennycook S.J., Browing N.D., Nellist P.D., Sivanathan S., Beaumont B., Faurie J.P. and Gibart P., 1998, Mat. Res. Symp. Proc. 482, 781.

    CAS  Article  Google Scholar 

  15. 15.

    Potin V., Ruterana P., Nouet G., Pond R.C., and Morkoç H., Phys. Rev. B, 61, in press

  16. 16.

    Vermaut P., Ruterana P., Nouet G., Salvador A., and Morkoç H., 1996, MRS Int. J. Nitride Res. 1, 42

    Google Scholar 

  17. 17.

    Ruterana P., Vermaut P., Nouet G., Botchkarev A., Salvador A. and Morkoç H., 1997, Mater. Sci. Eng. B50, 72.

    CAS  Article  Google Scholar 

  18. 18.

    Drum C.M., 1965, Philos. Mag. A11, 313.

    Article  Google Scholar 

  19. 19.

    Blank H., Delavignette P., Gevers R., and Amelinckx S., 1964, Phys. Stat. Solid 7, 747.

    CAS  Article  Google Scholar 

  20. 20.

    Ponce F.A., Bour D.P., Götz W., Johnson N.M., Helava H.I., Grezgory I., Jun J. and Porowski S., 1996, Appl. Phys. Lett. 68, 917

    CAS  Article  Google Scholar 

  21. 21.

    Potin V., Nouet G., and Ruterana P., 1999, Appl. Phys. Lett. 74, 947.

    CAS  Article  Google Scholar 

  22. 22.

    Northrup J.E., Neugebauer J., and Romano L.T., 1996, Phys. Rev. Lett. 77, 103.

    CAS  Article  Google Scholar 

  23. 23.

    Potin V., Ruterana P., and Nouet G., 1997, J. Appl. Phys. 82, 1276

    Article  Google Scholar 

  24. 24.

    Holt D.B., 1969, J. Phys. Chem. Solids 30, 1297

    CAS  Article  Google Scholar 

Download references

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  1. Laboratoire d’Etudes et de Recherches sur les Matériaux, UPRESA 6004 CNRS, Institut des Sciences de la Matière et du Rayonnement, 6 Bd Maréchal Juin, 14050, Caen Cedex, France

    P. Ruterana & G. Nouet

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  1. P. Ruterana
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  2. G. Nouet
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Correspondence to P. Ruterana.

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Ruterana, P., Nouet, G. The atomic structure of extended defects in GaN. MRS Online Proceedings Library 595, 54 (1999). https://doi.org/10.1557/PROC-595-F99W5.4

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