The atomic structure of extended defects in GaN


GaN layers contain large densities (1010 cm−2) of threading dislocations, nanopipes, (0001) and {1120} stacking faults, and {1010} inversion domains. Three configurations have been found for pure edge dislocations, mainly inside high angle grain boundaries where the 4 atom ring cores can be stabilized. Two atomic configurations, related by a 1/6 < 1010 > stair rod dislocation, have been observed for the {1120} stacking fault in (Ga-Al)N layers. For the {1010} inversion domain boundaries, a configuration corresponding to the Holt model was observed, as well as another with no N-N or Ga-Ga bonds.

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Ruterana, P., Nouet, G. The atomic structure of extended defects in GaN. MRS Online Proceedings Library 595, 54 (1999).

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