Probing Nitride Thin Films in 3-Dimensions using a Variable Energy Electron Beam

Abstract

In this paper we illustrate the application of electron beam techniques to the measurement of strain, defect and alloy concentrations in nitride thin films. We present brief comparative studies of CL spectra of AlGaN and InGaN epilayers and EBSD patterns obtained from two silicon-doped 3 μm thick GaN epilayers grown on an on-axis (0001) sapphire substrate and a sapphire substrate misoriented by 10° toward the m-plane (1010).

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Correspondence to Carol Trager-Cowan.

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Trager-Cowan, C., McColl, D., Sweeney, F. et al. Probing Nitride Thin Films in 3-Dimensions using a Variable Energy Electron Beam. MRS Online Proceedings Library 595, 510 (1999). https://doi.org/10.1557/PROC-595-F99W5.10

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