Electrical Properties of Oxygen Doped GaN Grown by Metalorganic Vapor Phase Epitaxy

Abstract

Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as the square root of the oxygen partial pressure. Oxygen is a shallow donor with a thermal ionization energy of 27 ±2 meV. A compensation ratio of Θ = 0.3–0.4 was determined from Hall effect measurements. The formation energy of ON of EF = 1.3 eV, determined from the experimental data, is lower than the theoretically predicted value.

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Korotkov, R.Y., Wessels, B.W. Electrical Properties of Oxygen Doped GaN Grown by Metalorganic Vapor Phase Epitaxy. MRS Online Proceedings Library 595, 380 (1999). https://doi.org/10.1557/PROC-595-F99W3.80

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