Electrical Properties of Oxygen Doped GaN Grown by Metalorganic Vapor Phase Epitaxy


Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as the square root of the oxygen partial pressure. Oxygen is a shallow donor with a thermal ionization energy of 27 ±2 meV. A compensation ratio of Θ = 0.3–0.4 was determined from Hall effect measurements. The formation energy of ON of EF = 1.3 eV, determined from the experimental data, is lower than the theoretically predicted value.

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  1. 1.

    C. G. van de Walle, C. Stampfl and J. Neugebauer, J. Cryst. Growth 189, 505 (1998).

    Article  Google Scholar 

  2. 2.

    M. A. di Forte-Poisson, F. Huet, A. Romann, M. Tordjman, et al J. Cryst. Growth 195, 314 (1998).

    Article  Google Scholar 

  3. 3.

    K. H. Ploog and O. Brandt, J. Vac. Sci. Technol. A 16, 1609 (1998).

    CAS  Article  Google Scholar 

  4. 4.

    B-C. Chung and M. Gershenzon, J. Appl. Phys. 72, 651 (1992).

    CAS  Article  Google Scholar 

  5. 5.

    R. Niebuhr, K. H. Bachem, U. Kaufmann, M. Maier, C. Merz, et al J. of Electr. Mat. 26, 1127 (1997).

    CAS  Article  Google Scholar 

  6. 6.

    W. Gotz, R. S. Kern, C. H. Chen, H. Liu, D. A. Steigerwald, et al, Mat. Sci. and Eng B 59, 211 (1999).

    Article  Google Scholar 

  7. 7.

    V. A. Joshkin, C. A. Parker, S. M. Bedair, J. F. Muth, I. K. Shmagin, et al, J. Appl. Phys. 86, 281 (1999).

    CAS  Article  Google Scholar 

  8. 8.

    W. M. Chen, I. A. Buyanova, Mt. Wagner, B. Monemar, et al, Phys. Rev. B 58, R13351 (1998).

    CAS  Article  Google Scholar 

  9. 9.

    D. C. Look, Electrical Characterization of GaAs Materials and Devices (Wiley, New York, 1989).

    Google Scholar 

  10. 10.

    J. W. Orton and C. T. Foxon, Semicond. Sci. Technol. 13, 310 (1998).

    CAS  Article  Google Scholar 

  11. 11.

    S. Nakamura, T. Mukai and M. Senoh, J. J Appl. Phys. A 31, 2883 (1992).

    CAS  Article  Google Scholar 

  12. 12.

    D. C. Look, J. R. Sizelove, S. Keller, Y. F. Wu, U. K. Mishra, et al. Solid State Comm. 102, 297 (1997).

    CAS  Article  Google Scholar 

  13. 13.

    D. C. Look, R. J. Molnar, Appl. Phys. Lett. 70, 3377 (1997).

    CAS  Article  Google Scholar 

  14. 14.

    M. D. McCluskey, N. M. Johnson, et al, Phys. Rev. Lett. 80, 4008 (1997)

    Article  Google Scholar 

  15. 15.

    R. A. Smith, Semiconductors (Cambridge, 1959)

    Google Scholar 

  16. 16.

    G-C Yi and B. W. Wessels, Appl. Phys. Lett 69, 3028 (1996)

    CAS  Article  Google Scholar 

  17. 17.

    J. Neugebauer and C. G. Van de Walle, FESTKOR A S 35:25–43 (1996)

    CAS  Google Scholar 

  18. 18.

    M. Ilegems and H. C. Montgomery, J. Phys. Chem. Solids 34, 885 (1973)

    CAS  Article  Google Scholar 

  19. 19.

    N. F. Mott and W. D. Twose, Adv. Phys. 10, 107 (1961)

    CAS  Article  Google Scholar 

  20. 20.

    To better fit the high temperature side of the mobility curve we used D. C. Look approach12. A near perfect fit to experimental data can be achieved when the acoustic deformation potential E1 = 17 (9.2) eV of and e0(e∝−1- e−1) = 0.104 (0.0867) are used with literature values given in brackets.

  21. 21.

    R. Y. Korotkov and B. W. Wessels (unpublished).

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Korotkov, R.Y., Wessels, B.W. Electrical Properties of Oxygen Doped GaN Grown by Metalorganic Vapor Phase Epitaxy. MRS Online Proceedings Library 595, 380 (1999). https://doi.org/10.1557/PROC-595-F99W3.80

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