The polarity of laterally epitaxially overgrown (LEO) GaN on Si(111) with an AlN buffer layer grown by MOCVD has been studied by convergent beam electron diffraction (CBED). The LEO GaN was studied by cross-section and plan-view transmission electron microscopy (TEM). The threading dislocation density is less than 108cm−2 and no inversion domains were observed. CBED patterns were obtained at 200 kV for the <1100> zone. Simulation was done by many-beam solution with 33 zero-order beams. The comparison of experimental CBED patterns and simulated patterns indicates that the polarity of GaN on Si(111) is Ga face.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
J. S. Speck and S. J. Rosner, Physica B, in press.
H. Marchand, N. Zhang, L. Zhao, Y. Golan, S. J. Rosner, G. Girolami, P. T. Fini, J. P. Ibbetson, S. Keller, S. DenBaars, J. S. Speck, U. K. Mishra, MRS Internet J. Nitride Semicond. Res., 4, Article 2, 1999.
T. Sasaki, T. Matsuoka, J. Appl. Phys. 64, 4531 (1988).
Z. Liliental-Weber, J. Washburn, K. Pakula, and J. Baranowski, Microsc. Microanal., 3, 436 (1997).
F.A. Ponce, D.P. Bour, W.T. Young, M. Saunders, J.W. Steeds, Appl. Phys. Lett. 69, 337 (1996).
P. Vermaut, P. Ruterana, G. Nouet, Phil. Mag. A 76, 1215 (1997).
J. L. Weyher, S. Müller, I. Grzegory, S. Porowski, J. Cryst. Growth 182, 17 (1997).
E. S. Hellman, MRS Internet J. Nitride Semicond. Res. 3, Article 11, 1998.
Available from Virtual Laboratories (Tel. 505 828 1640).
M. H. Loretto and R. E. Smallman, Defect Analysis in Electron Microscopy, (John Wiley & Sons Inc., New York, 1975), chapter 1.3.
About this article
Cite this article
Zhao, L., Marchand, H., Fini, P. et al. Polarity Determination for MOCVD Growth of GaN on Si(111) by Convergent Beam Electron Diffraction. MRS Online Proceedings Library 595, 33 (1999). https://doi.org/10.1557/PROC-595-F99W3.3