Mass Transport, Faceting and Behavior of Dislocations in GaN

MRS Online Proceedings Library volume 595, Article number: 28 (1999) Cite this article

Abstract

The behavior of threading dislocations during mass transport of GaN was investigated in detail by transmission electron microscopy. Mass transport occurred at the surface. Therefore, growing species are supplied from the in-plane direction. The behavior of threading dislocations was found to be strongly affected by the mass transport process as well as the high crystallographic anisotropy of the surface energy of the facets particular to GaN.

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Affiliations

  1. Department of Electrical and Electronic Engineering, High-Tech Research Center, Meijo University, Tempaku-ku, Nagoya, 468-8502, Japan

    S. Nitta, T. Kashima, M. Kariya, Y. Yukawa, H. Amano & I. Akasaki

  2. High-Tech Research Center, Meijo University, Tempaku-ku, Nagoya, 468-8502, Japan

    S. Yamaguchi, H. Amano & I. Akasaki

Authors
  1. S. Nitta
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  2. T. Kashima
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  3. M. Kariya
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  4. Y. Yukawa
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  5. S. Yamaguchi
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  6. H. Amano
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  7. I. Akasaki
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Correspondence to S. Nitta.

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Nitta, S., Kashima, T., Kariya, M. et al. Mass Transport, Faceting and Behavior of Dislocations in GaN. MRS Online Proceedings Library 595, 28 (1999). https://doi.org/10.1557/PROC-595-F99W2.8

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