Advanced Pendeoepitaxy™ of GaN and AlxGa1−xN Thin Films on SiC(0001) and Si(111) Substrates via Metalorganic Chemical Vapor Deposition

Abstract

Growth of GaN and AlxGa1−xN thin films on 6H-SiC(0001) and Si(111) substrates with low densities of defects using the PENDEO™ process and the characterization of the resulting materials are reported. The application of a mask on the GaN seed structures hinders the vertical propagation of threading dislocations of the seed material during regrowth, but introduces a misregistry in the overgrowing material resulting in low quality crystal growth. This misregistry has been eliminated due to advanced processing and the exclusion of the masking layer. The new generation of samples do not show any misregistry, as shown by transmission electron microscopy.

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Correspondence to T. Gehrke.

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PENDEOEPITAXY and PENDEO are trademarks of Nitronex Corporation, Raleigh, NC 27606

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Gehrke, T., Linthicum, K.J., Rajagopal, P. et al. Advanced Pendeoepitaxy™ of GaN and AlxGa1−xN Thin Films on SiC(0001) and Si(111) Substrates via Metalorganic Chemical Vapor Deposition. MRS Online Proceedings Library 595, 24 (1999). https://doi.org/10.1557/PROC-595-F99W2.4

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