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Advanced Pendeoepitaxy™ of GaN and AlxGa1−xN Thin Films on SiC(0001) and Si(111) Substrates via Metalorganic Chemical Vapor Deposition

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Abstract

Growth of GaN and AlxGa1−xN thin films on 6H-SiC(0001) and Si(111) substrates with low densities of defects using the PENDEO™ process and the characterization of the resulting materials are reported. The application of a mask on the GaN seed structures hinders the vertical propagation of threading dislocations of the seed material during regrowth, but introduces a misregistry in the overgrowing material resulting in low quality crystal growth. This misregistry has been eliminated due to advanced processing and the exclusion of the masking layer. The new generation of samples do not show any misregistry, as shown by transmission electron microscopy.

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References

  1. T. Gehrke, K. J. Linthicum, D.B. Thomson, P. Rajagopal, A. D. Batchelor and R. F. Davis, MRS Internet J. Nitride Semicond. Res 4S1, G3.2 (1999)

    Google Scholar 

  2. K. J. Linthicum, T. Gehrke, D.B. Thomson, K.M. Tracy, E.P. Carlson, T.P. Smith, T.S. Smith, T.S. Zheleva, C.A. Zorman, M. Mehregany, and R.F. Davis, MRS Internet J. Nitride Semicond. Res4S1, G4.9 (1999)

    Google Scholar 

  3. K. J. Linthicum, T. Gehrke, D.B. Thomson, E.P. Carlson, P. Rajagopal, T. Smith, and R.F. Davis, Appl. Phys. Lett., Vol.75, No.2, p.196 (1999)

    Article  CAS  Google Scholar 

  4. D.B. Thomson, T. Gehrke, K. J. Linthicum, P. Rajagopal, P. Hartlieb, T. S. Zheleva and R. F. Davis, MRS Internet J. Nitride Semicond. Res 4S1, G3.37 (1999)

    Google Scholar 

  5. K.J. Linthicum, T. Gehrke, D. Thomson, C. Ronning, E.P. Carlson, C.A. Zorman, M. Mehregany, and R.F. Davis, MRS, Spring Meeting 1999, Symp. Y, 6.7

    Google Scholar 

  6. T. Gehrke, K. J. Linthicum, E. Preble, P. Rajagopal, C. Ronning, C. Zorman, M. Mehregany, R. F. Davis, submitted for publication in J. of Electr. Mater.

  7. O.H. Nam, T.S. Zheleva, M.D. Bremser, D.B. Thomson, R.F. Davis, Mat. Res. Soc. Symp. Proc., Vol.482, p.301 (1998)

    Article  CAS  Google Scholar 

  8. Z. Liliental-Weber, M. Benamara, W. Swider, J. Washburn, J. Park, P.A. Grudowski, C.J. Eiting, R.D. Dupuis, MRS Internet J. Nitride Semicond. Res. 4S1, G4.6 (1999)

    Google Scholar 

  9. A. Sakai, H. Suankawa, A. Usui, Appl. Phys. Lett., Vol.73, No.4, (1998) p.481

    Article  CAS  Google Scholar 

  10. H. Marchand, N. Zhang, L. Zhao, Y. Golan, S.J. Rosner, G. Girolami, P.T. Fini, J.P. Ibbetson, S. Keller, S.P. DenBaars, J.S. Speck, U.K. Mishra, MRS Internet J. Nitride Semicond. Res. 4, 2 (1999)

    Article  Google Scholar 

  11. T. Gehrke, K.J. Linthicum, P. Rajagopal, E.A. Preble, E.P. Carlson, B.M. Robin, R.F. Davis, Int. Conf. on SiC and Related Materials (ICSCRM), Raleigh, NC, paper #269 (1999)

  12. P. Fini, H. Marchand, J.B. Ibbetson, B. Moran, L. Zhao, S.P. DenBaars, J.S. Speck, U.K. Mishra, MRS, Spring Meeting 1999, Symp. Y, 6.6

    Google Scholar 

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Authors and Affiliations

  1. Materials Research Center, North Carolina State University, Box 7919, Raleigh, NC, 27695-7919, USA

    T. Gehrke, K. J. Linthicum, P. Rajagopal, E. A. Preble & R. F. Davis

  2. Nitronex Corporation, Suite 104, 616 Hutton Street, Raleigh, NC, 27606, USA

    K. J. Linthicum & P. Rajagopal

Authors
  1. T. Gehrke
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  2. K. J. Linthicum
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  3. P. Rajagopal
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  4. E. A. Preble
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  5. R. F. Davis
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Corresponding author

Correspondence to T. Gehrke.

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PENDEOEPITAXY and PENDEO are trademarks of Nitronex Corporation, Raleigh, NC 27606

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Gehrke, T., Linthicum, K.J., Rajagopal, P. et al. Advanced Pendeoepitaxy™ of GaN and AlxGa1−xN Thin Films on SiC(0001) and Si(111) Substrates via Metalorganic Chemical Vapor Deposition. MRS Online Proceedings Library 595, 24 (1999). https://doi.org/10.1557/PROC-595-F99W2.4

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  • DOI: https://doi.org/10.1557/PROC-595-F99W2.4

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