When the stoichiometric TiN was deposited directly on GaN, we obtained columnar TiN grains of 5-20 nm section which cross the whole film thickness and are rotated mostly around the  axis. The conventional epitaxial relationship is obtained and no amorphous patches are observed at the interface. The deposition of TiN on Si doped GaN layers lead to the formation of an ohmic contact, whereas we obtain a rectifying contact on p type layers.
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Ruterana, P., Nouet, G., Kehagias, T. et al. The microstructure and electrical properties of directly deposited TiN ohmic contacts to Gallium Nitride. MRS Online Proceedings Library 595, 1175 (1999). https://doi.org/10.1557/PROC-595-F99W11.75