The Effect of Nitrogen Ion Damage on the Optical and Electrical Properties of MBE GaN Grown on MOCVD GaN/Sapphire Templates

MRS Online Proceedings Library volume 595, Article number: 1156 (1999) Cite this article

Abstract

We have established a correlation between localized states responsible for mid-gap optical emission and film mobility of GaN grown under different nitrogen conditions. By imposing a deflector voltage at the tip of the plasma source, we varied the ion/neutral flux ratio to determine how N ions affect mid-gap luminescence and electrical mobility. Low energy electron-excited nanometer scale luminescence (LEEN) spectroscopy in ultrahigh vacuum (UHV) showed mid-gap emission intensities in the bulk that decreased in the ratio, 50: 1.3: 1 with increasing deflector voltage. Hall measurements indicated over a factor of two increase in mobility, and a factor of 8 decrease in residual charge density with increasing deflector voltage. The correlation of optical and electrical properties with a reduction in N ion flux suggests the primary role of native defects, such as N or Ga vacancies, in the mid-gap emissions.

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References

  1. 1.

    T.D. Moustakas, T. Lei and R.J. Molnar, Physica B 185, 36 (1993).

    CAS  Article  Google Scholar 

  2. 2.

    E. J. Tarsa, B. Heying, X. H. Wu, P. Fini, S. P. DenBaars and J.S. Speck, J. Appl. Phys. 82, 5472 (1997) and there-in.

    CAS  Article  Google Scholar 

  3. 3.

    M. A. L. Johnson, J. D. Brown, N. A. El-Masry, J. W. Cook Jr., J. F. Schetzina, H. S. Kong and J. A. Redmond, J. Vac. Sci. Technol. B 16, 1282 (1998).

    CAS  Article  Google Scholar 

  4. 4.

    T. H. Myers, M. R. Millecchia, A. T. Ptak, K. S. Ziemer and C. D. Stinespring, J. Vac. Sci. Technol. B 17, 1654 (1999) and there-in.

    CAS  Article  Google Scholar 

  5. 5.

    T.E. Everhart and P. H. Hoff, J. Appl, Phys, 42, 5837 (1971).

    CAS  Article  Google Scholar 

  6. 6.

    R. Zhang and T. F. Kuech, Appl. Phys. Lett. 72, 1611 (1998).

    CAS  Article  Google Scholar 

  7. 7.

    R. J. Molnar, K.B. Nichols, P. Maki, E. R. Brown and I. Melngailis, Mater. Res. Soc. Symp. Proc. 378, 479 (1995).

    CAS  Article  Google Scholar 

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Affiliations

  1. Department of Electrical Engineering, The Ohio-State University, 2015 Neil Avenue, Columbus, OH, 43210-1272, USA

    Alexander P. Young & Leonard J. Brillson

  2. Department of Electrical Engineering, University of California, San Diego, 9500 Gilman Dr., La Jolla, CA, 92093-0407, USA

    Yoshiki Naoi & Charles W. Tu

Authors
  1. Alexander P. Young
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  2. Leonard J. Brillson
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  3. Yoshiki Naoi
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  4. Charles W. Tu
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Correspondence to Alexander P. Young.

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Young, A.P., Brillson, L.J., Naoi, Y. et al. The Effect of Nitrogen Ion Damage on the Optical and Electrical Properties of MBE GaN Grown on MOCVD GaN/Sapphire Templates. MRS Online Proceedings Library 595, 1156 (1999). https://doi.org/10.1557/PROC-595-F99W11.56

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