Nonlinear Optical Characterization of GaN Layers Grown by MOCVD on Sapphire

MRS Online Proceedings Library volume 595, Article number: 1152 (1999) Cite this article

Abstract

Optical second and third harmonic generation measurements were carried out on GaN layers grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. The measured d33 is 33 times the d11 of quartz. The angular dependence of second-harmonic intensity as well as the measured ratios d33/d15= -2.02 and d33/d31 = -2.03 confirm the wurzite structure of the studied GaN layers with the optical c-axis oriented perpendicular to the sample surface. Fine oscillations were observed in the measured second and third harmonic angular dependencies. A simple model based on the interference of the fundamental beam in the sample was used to explain these oscillations.

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Affiliations

  1. Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, MI, 48109-2122, USA

    Dimitris Pavlidis & Andreas Eisenbach

  2. Laser-Laboratorium Göttingen, Hans-Adolf-Krebs-Weg 1, D-37077, Göttingen, Germany

    Ralf Hildebrandt & Gerd Marowsky

  3. Institut für Hochfrequenztechnik, Technische Universität Darmstadt, D-64283, Darmstadt, Germany

    Hans L. Hartnagel

  4. Laboratory of Low-Dimensional Semiconductor Structures, Institute of Applied Physics, Technical University of Moldova, 2004, Chisinau, Moldova

    Ivan M. Tiginyanu & Igor V. Kravetsky

  5. Laboratory of Low-Dimensional Semiconductor Structures, Institute of Applied Physics, Technical University of Moldova, 2004, Chisinau, Moldova

    Ivan M. Tiginyanu

Authors
  1. Ivan M. Tiginyanu
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  2. Igor V. Kravetsky
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  3. Dimitris Pavlidis
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  4. Andreas Eisenbach
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  5. Ralf Hildebrandt
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  6. Gerd Marowsky
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  7. Hans L. Hartnagel
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Correspondence to Ivan M. Tiginyanu.

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Tiginyanu, I.M., Kravetsky, I.V., Pavlidis, D. et al. Nonlinear Optical Characterization of GaN Layers Grown by MOCVD on Sapphire. MRS Online Proceedings Library 595, 1152 (1999). https://doi.org/10.1557/PROC-595-F99W11.52

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