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Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy

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Abstract

We comprehensively studied InGaN/GaN heterostructures grown by molecular beam epitaxy (MBE) using a variety of methods of optical spectroscopy, such as cathodoluminescence microscopy (CL), time-integrated and time-resolved photoluminescence. To correlate the fluctuations in emission wavelength with values for the optical amplification we performed gain measurements in edge-stripe geometry. The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Gain values up to 62 cm-1 were found in samples with low indium fluctuations, which is comparable to values for high-quality InGaN/GaN heterostructures grown by MOVPE.

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Authors and Affiliations

  1. Institut für Festkörperphysik, TU Berlin, Hardenbergstrasse 36, 10623, Berlin, Germany

    A. Kaschner, J. Holst, U. von Gfug & A. Hoffmann

  2. Institut für Experimentelle Physik, Otto-von-Guericke-Universität, PO Box 4120, 39016, Magdeburg, Germany

    F. Bertram, T. Riemann, D. Rudloff, P. Fischer & J. Christen

  3. Infineon Technologies, Corporate Research, CPR 7, 81730, München, Germany

    R. Averbeck & H. Riechert

Authors
  1. A. Kaschner
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  2. J. Holst
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  3. U. von Gfug
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  4. A. Hoffmann
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  5. F. Bertram
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  6. T. Riemann
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  7. D. Rudloff
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  8. P. Fischer
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  9. J. Christen
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  10. R. Averbeck
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  11. H. Riechert
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Kaschner, A., Holst, J., von Gfug, U. et al. Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy. MRS Online Proceedings Library 595, 1134 (1999). https://doi.org/10.1557/PROC-595-F99W11.34

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  • DOI: https://doi.org/10.1557/PROC-595-F99W11.34

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