Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy

Abstract

We comprehensively studied InGaN/GaN heterostructures grown by molecular beam epitaxy (MBE) using a variety of methods of optical spectroscopy, such as cathodoluminescence microscopy (CL), time-integrated and time-resolved photoluminescence. To correlate the fluctuations in emission wavelength with values for the optical amplification we performed gain measurements in edge-stripe geometry. The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Gain values up to 62 cm-1 were found in samples with low indium fluctuations, which is comparable to values for high-quality InGaN/GaN heterostructures grown by MOVPE.

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Correspondence to A. Kaschner.

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Kaschner, A., Holst, J., von Gfug, U. et al. Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy. MRS Online Proceedings Library 595, 1134 (1999). https://doi.org/10.1557/PROC-595-F99W11.34

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