Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy

MRS Online Proceedings Library volume 595, Article number: 1134 (1999) Cite this article

Abstract

We comprehensively studied InGaN/GaN heterostructures grown by molecular beam epitaxy (MBE) using a variety of methods of optical spectroscopy, such as cathodoluminescence microscopy (CL), time-integrated and time-resolved photoluminescence. To correlate the fluctuations in emission wavelength with values for the optical amplification we performed gain measurements in edge-stripe geometry. The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Gain values up to 62 cm-1 were found in samples with low indium fluctuations, which is comparable to values for high-quality InGaN/GaN heterostructures grown by MOVPE.

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References

  1. [1]

    S. Nakamura and G. Fasol: The Blue Laser Diode (Springer, Berlin, 1997).

    Google Scholar 

  2. [2]

    Y.-H Kwon, G. H. Gainer, S. Bidnyk, Y.-H. Cho, J. J. Song, M. Hansen, and S. P. DenBaars, Appl. Phys. Lett. 75, 2545, (1999).

    CAS  Article  Google Scholar 

  3. [3]

    T. Wang, D. Nakagawa, M. Lachab, T. Sugahara, and S. Sakai, Appl. Phys. Lett. 74, 3128, (1999).

    CAS  Article  Google Scholar 

  4. [4]

    H. Kollmer, J. S. Im, S. Heppel, J. Off, F. Scholz, and A. Hangleiter, Appl. Phys. Lett. 74, 82, (1999).

    CAS  Article  Google Scholar 

  5. [5]

    I.-H. Ho and G. B. Stringfellow, Appl. Phys. Lett. 69, 2701, (1996).

    CAS  Article  Google Scholar 

  6. [6]

    K. P. O’Donnell, R. W. Martin, and P. G. Middleton, Phys. Rev. Lett. 82, 237, (1999).

    Article  Google Scholar 

  7. [7]

    R. Averbeck, A. Graber, H. Tews, D. Bernklau, U. Barnhöfer, and H. Riechert, SPIE Vol.3279, 28, (1998).

    CAS  Google Scholar 

  8. [8]

    F. Bertram, T. Riemann, J. Christen, A. Kaschner, A. Hoffmann, C. Thomsen, K. Hiramatsu, T. Shibata, and N. Sawaki; Appl. Phys. Lett. 74, 359, (1999).

    CAS  Article  Google Scholar 

  9. [9]

    K. L. Shaklee, R. E. Nahory, and R. F. Leheny, J. Lum. 7, 284, (1973).

    CAS  Article  Google Scholar 

  10. [10]

    M. Schuster, P. O. Gervais, B. Jobst, W. Hösler, R. Averbeck, H. Riechert, A Iberl, and R. Stömmer, J. Phys. D Appl. Phys. 32, 56, (1999).

    Article  Google Scholar 

  11. [11]

    Y.-H. Cho, G. H. Gainer, A. J. Fischer, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars, Appl. Phys. Lett. 73, 1370, (1998).

    CAS  Article  Google Scholar 

  12. [12]

    J. Christen, T. Riemann, P. Fischer, J. Holst, A. Hoffmann, and M. Heuken, MRS Fall Meeting Boston 1999.

    Google Scholar 

  13. [13]

    M. Pophristic, F. H. Long, C. Tran, I. T. Ferguson, and R. F. Karlicek, J. Appl. Phys. 86, 1114, (1999).

    CAS  Article  Google Scholar 

  14. [14]

    M. Pophristic, F. H. Long, C. Tran, R. F. Karlicek, Z. C. Feng, and I. T. Ferguson, Appl. Phys. Lett. 73, 815, (1998).

    CAS  Article  Google Scholar 

  15. [15]

    Y.-H. Cho, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars,. Appl. Phys. Lett. 73, 3181, (1998).

    CAS  Article  Google Scholar 

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Affiliations

  1. Institut für Festkörperphysik, TU Berlin, Hardenbergstrasse 36, 10623, Berlin, Germany

    A. Kaschner, J. Holst, U. von Gfug & A. Hoffmann

  2. Institut für Experimentelle Physik, Otto-von-Guericke-Universität, PO Box 4120, 39016, Magdeburg, Germany

    F. Bertram, T. Riemann, D. Rudloff, P. Fischer & J. Christen

  3. Infineon Technologies, Corporate Research, CPR 7, 81730, München, Germany

    R. Averbeck & H. Riechert

Authors
  1. A. Kaschner
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  2. J. Holst
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  3. U. von Gfug
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  4. A. Hoffmann
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  5. F. Bertram
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  6. T. Riemann
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  7. D. Rudloff
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  8. P. Fischer
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  9. J. Christen
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  10. R. Averbeck
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  11. H. Riechert
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Corresponding author

Correspondence to A. Kaschner.

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Kaschner, A., Holst, J., von Gfug, U. et al. Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy. MRS Online Proceedings Library 595, 1134 (1999). https://doi.org/10.1557/PROC-595-F99W11.34

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