Room Temperature CW Operation of GaN-Based Blue Laser Diodes by GaInN/GaN Optical Guiding Layers

MRS Online Proceedings Library volume 595, Article number: 12 (1999) Cite this article

Abstract

GaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.

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Affiliations

  1. Optoelectronics, Toyoda Gosei Co., Ltd., Haruhi-cho, Nishikasugai-gun, Aichi, 452-8564, Japan

    Masayoshi Koike, Shiro Yamasaki, Yuta Tezen, Seiji Nagai, Sho Iwayama & Akira Kojima

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  1. Masayoshi Koike
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  2. Shiro Yamasaki
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  3. Yuta Tezen
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  4. Seiji Nagai
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  5. Sho Iwayama
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  6. Akira Kojima
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Correspondence to Masayoshi Koike.

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Koike, M., Yamasaki, S., Tezen, Y. et al. Room Temperature CW Operation of GaN-Based Blue Laser Diodes by GaInN/GaN Optical Guiding Layers. MRS Online Proceedings Library 595, 12 (1999). https://doi.org/10.1557/PROC-595-F99W1.2

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