Electrical Behavior of Pure and Cu Doped Diamondlike Carbon Prepared by Pulsed Laser Deposition

Abstract

We have prepared pure diamondlike carbon films and Cu doped diamondlike carbon films through pulsed laser deposition. The Cu concentration does not exceed 3.0 atomic percent. Electrical conduction studies were carried out on the films to understand the electrical transport mechanism. It was found that both pure DLC and Cu doped DLC are of p-type conduction. Incorporation of Cu into the DLC films decreases the resistivity significantly. Transmission electron microscopy and radial distribution function analyses showed that the DLC films are typical tetrahedral amorphous carbon. The conductivity of Cu doped DLC films exhibitedT1/2 temperature dependence, rather than theT1/4 dependence (Mott-Davis law). This dependence was observed within a wide temperature range (from below liquid nitrogen temperature to near room temperature). TheT1/2 dependence was explained on the basis of the Efros-Shklovskii model which considers the long range Coulomb interaction between localized states

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Wei, Q., Sharma, A.K., Yamolenko, S. et al. Electrical Behavior of Pure and Cu Doped Diamondlike Carbon Prepared by Pulsed Laser Deposition. MRS Online Proceedings Library 593, 377–382 (1999). https://doi.org/10.1557/PROC-593-377

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