For sub-5 nm oxides there are two different stages for breakdown; soft breakdown (SBD) and hard breakdown (HBD). It has been shown that both SBD and HBD exhibit the same statistics. Therefore, the physical mechanism governing them is the same. The major difference between them is the energy transferred from the capacitor to the localized conducting path. In this paper, a simple equivalent circuit is proposed to explain the effect of the measurement technique, oxide thickness, and test structure area on the detection of soft breakdown. Also an inelastic quantum tunneling model is proposed to discuss the current-voltage characteristics after SBD. The model is also successful in explaining the temperature dependence of SBD IV characteristics.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
D. J. DiMaria, E. Cartier, and D. Arnold, J. Appl. Phys., 73, 7, pp. 3367–3384 (1993)
R. Degraeve, G. Groeseneken, R. Bellens, J. L. Ogier, M. Depas, P. J. Roussel, and H. E. Maes, IEEE Trans. Electron Devices, 45, (4), pp. 904–911 (1998)
M. Depas, T. Nigam, and M.M. Heyns, IEEE Trans. Electron Devices, 30, (9), pp. 1499–1504 (1996)
A. Halimaoui, O. Briere, and G. Ghibaudo, Microelectronic Engineering, 36, (1-4), pp. 157–160 (1997)
K. Okada, S. Kawasaki, Y. Hirofuji, Ext. Absr. of the 1994 SSDM, Yokohama, pp. 565–567, (1994)
B.E. Weir, P.J. Silverman, D. Monroe, K.S. Krisch, M. A. Alam, G.B. Alers, T.W. Sorsch, G.L. Timp, F. Bauman, C.T. Liu, Y. Ma, and D. Hwang, IEDM Tech. Dig., pp. 73–76 (1997)
G.B. Alers, B.E. Weir, M. A. Alam, G.L. Timp and T.W. Sorsch Int. Rel. Phys. Sym. Proceedings, pp.76–79, (1998)
T. Yashida, S. Miyazaki, and M. Hirose, Ext. Absr. of the SSDM, pp. 539–541, (1996)
K. Okada, and K. Taniguchi Appl. Phys. Lett., 70, (3), pp. 351–353 (1997)
M. Houssa, T. Nigam, P. W. Mertens, and M. M. Heyns, Appl. Phys. Lett., 73, (-), pp. 514–516 (1998)
Single Charge tunneling: Coulomb blockade Phenomena in Nanostructures NATO ASI Series 1992. Edited by H. Grabert, and M. H. Devoret.
Y. Kamakura, T. Sakura, K. Okada et al. Dielectric Workshop, Tokyo, Japan, 1999
About this article
Cite this article
Nigam, T., Degraeve, R., Groeseneken, G. et al. Measurement Technique, Oxide Thickness and Area Dependence of Soft-Breakdown. MRS Online Proceedings Library 592, 335–341 (1999). https://doi.org/10.1557/PROC-592-337