Measurement Technique, Oxide Thickness and Area Dependence of Soft-Breakdown

Abstract

For sub-5 nm oxides there are two different stages for breakdown; soft breakdown (SBD) and hard breakdown (HBD). It has been shown that both SBD and HBD exhibit the same statistics. Therefore, the physical mechanism governing them is the same. The major difference between them is the energy transferred from the capacitor to the localized conducting path. In this paper, a simple equivalent circuit is proposed to explain the effect of the measurement technique, oxide thickness, and test structure area on the detection of soft breakdown. Also an inelastic quantum tunneling model is proposed to discuss the current-voltage characteristics after SBD. The model is also successful in explaining the temperature dependence of SBD IV characteristics.

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References

  1. [1]

    D. J. DiMaria, E. Cartier, and D. Arnold, J. Appl. Phys., 73, 7, pp. 3367–3384 (1993)

    CAS  Article  Google Scholar 

  2. [2]

    R. Degraeve, G. Groeseneken, R. Bellens, J. L. Ogier, M. Depas, P. J. Roussel, and H. E. Maes, IEEE Trans. Electron Devices, 45, (4), pp. 904–911 (1998)

    CAS  Article  Google Scholar 

  3. [3]

    M. Depas, T. Nigam, and M.M. Heyns, IEEE Trans. Electron Devices, 30, (9), pp. 1499–1504 (1996)

    Article  Google Scholar 

  4. [4]

    A. Halimaoui, O. Briere, and G. Ghibaudo, Microelectronic Engineering, 36, (1-4), pp. 157–160 (1997)

    CAS  Article  Google Scholar 

  5. [5]

    K. Okada, S. Kawasaki, Y. Hirofuji, Ext. Absr. of the 1994 SSDM, Yokohama, pp. 565–567, (1994)

    Google Scholar 

  6. [6]

    B.E. Weir, P.J. Silverman, D. Monroe, K.S. Krisch, M. A. Alam, G.B. Alers, T.W. Sorsch, G.L. Timp, F. Bauman, C.T. Liu, Y. Ma, and D. Hwang, IEDM Tech. Dig., pp. 73–76 (1997)

    Google Scholar 

  7. [7]

    G.B. Alers, B.E. Weir, M. A. Alam, G.L. Timp and T.W. Sorsch Int. Rel. Phys. Sym. Proceedings, pp.76–79, (1998)

  8. [8]

    T. Yashida, S. Miyazaki, and M. Hirose, Ext. Absr. of the SSDM, pp. 539–541, (1996)

    Google Scholar 

  9. [9]

    K. Okada, and K. Taniguchi Appl. Phys. Lett., 70, (3), pp. 351–353 (1997)

    CAS  Article  Google Scholar 

  10. [10]

    M. Houssa, T. Nigam, P. W. Mertens, and M. M. Heyns, Appl. Phys. Lett., 73, (-), pp. 514–516 (1998)

    CAS  Article  Google Scholar 

  11. [11]

    Single Charge tunneling: Coulomb blockade Phenomena in Nanostructures NATO ASI Series 1992. Edited by H. Grabert, and M. H. Devoret.

    Google Scholar 

  12. [12]

    Y. Kamakura, T. Sakura, K. Okada et al. Dielectric Workshop, Tokyo, Japan, 1999

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Nigam, T., Degraeve, R., Groeseneken, G. et al. Measurement Technique, Oxide Thickness and Area Dependence of Soft-Breakdown. MRS Online Proceedings Library 592, 335–341 (1999). https://doi.org/10.1557/PROC-592-337

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