From Radiation Induced Leakage Current to Soft Breakdown in Irradiated MOS Devices with Ultra-Thin Gate Oxide

Abstract

Metal Oxide Semiconductor (MOS) capacitors with ultra-thin oxides have been irradiated with ionising particles (8 MeV electrons or Si, Ni, and Ag high energy ions), featuring various Linear Energy Transfer (LET) ranging over 4 orders of magnitude. Different oxide fields (Fbias) were applied during irradiation, ranging between flat-band and 3 MV/cm. We measured the DC Radiation Induced Leakage Current (RILC) at low fields (3-6 MV/cm) after electron or Si ion irradiation. RILC was the highest in devices biased at flat band during irradiation. In devices irradiated with higher LET ions (Ni and Ag) we observed the onset of Soft-Breakdown phenomena. Soft-Breakdown current increases with the oxide field applied during the stress.

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Acknowledgments

This work has been partially supported by Consiglio Nazionale delle Ricerche, Italy, under Progetto Finalizzato Materiali e Dispositivi per l’Elettronica a Stato Solido-2.

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Correspondence to M. Ceschia.

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Ceschia, M., Paccagnella, A., Cester, A. et al. From Radiation Induced Leakage Current to Soft Breakdown in Irradiated MOS Devices with Ultra-Thin Gate Oxide. MRS Online Proceedings Library 592, 209–214 (1999). https://doi.org/10.1557/PROC-592-201

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