Room Temperature Ultraviolet Photoluminescence from 800°C Thermally Oxidized Si,1-x-yGexCy Thin Films on Si(100) Substrate


The thermally oxidized Si1-x-yGexCy thin films were grown on silicon substrates by Plasma-enhanced Chemical Vapor Deposition (PECVD) and then wet oxidized at 800°C for 20 minutes. Photoluminescence spectra of the samples were measured at room temperature under 250nm excitation. Two ultraviolet photoluminescence bands with the peaks at ~370nm and ~396nm were observed in the oxidized samples. Possible mechanism of this photoluminescence is discussed.

This is a preview of subscription content, access via your institution.


  1. 1.

    A.R. Silin and L. N. Skuja, J. of Non-Cryst. Solids, 71 (1985), p.443.

    CAS  Article  Google Scholar 

  2. 2.

    L.N. Skuja, A.N. Streketsky and A.B. Pakovich, Solid State Commun. 50 (1984), p. 1069.

    CAS  Article  Google Scholar 

  3. 3.

    E.W.J. Mitchell and E.G.S. Page, Proc. Phys. Soc.(London), B67 (1954), p. 262

  4. 4.

    L.N. Skuja, A.N. Trukhin and A.E. Plaudis, Phys. Stat. Sol. (a),84 (1984) K153.

    CAS  Article  Google Scholar 

  5. 5.

    L.P. Ginzburg, A.A. Gordeev, A.P. Gorchakov, A.P. Jilinsky, J. of Non-Cryst. Solids, 183 (1995), p. 234.

    CAS  Article  Google Scholar 

  6. 6.

    A.J. Cohen, Phys. Rev. 105 (1957), p. 1151

    CAS  Article  Google Scholar 

  7. 7.

    Myeongcheol Kim and H.J. Osten, Appl. Phys. Lett., 70 (1997), p. 2702

    CAS  Article  Google Scholar 

  8. 8.

    Xuemei Cheng, Youdou Zheng, Xiabing Liu, Lan Zang, Zhiyun Lo, Shunmning Zhu, Ping Han and Ruolian Jiang, Appl. Phys. Lett., 78 No.21 (1999), (to be published).

    Google Scholar 

  9. 9.

    Ning Jiang, L. Zang, R.L. Jiang, S.M. Zhu, P. Han, X.B. Liu, X.M. Cheng, R.H. Wang, Y.D. Zheng, X.N. Hu, J.X. Fang., Appl. Phys. A, 68(1998), p.457–460

    Article  Google Scholar 

  10. 10.

    Handbook of x-ray photoelectron spectroscopy edited by C.D. Wagner, W.M. Riggs, L.E. Davis, J.F. Moulder and G.E. Muilenberg, (Perkin-Elmer Corporation, Physical Electronics Division 1978)

    Google Scholar 

Download references


This work was supported by National Science Fund of China and the Research Fund for the Doctoral Program of Higher Education. The first author is also supported by MOTOROLA company. The authors also acknowledged W. F. Chen, Y. D. Ye and H. Chen for characterization assistance.

Author information



Corresponding author

Correspondence to X. M. Cheng.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Cheng, X.M., Zheng, Y.D., Zang, L. et al. Room Temperature Ultraviolet Photoluminescence from 800°C Thermally Oxidized Si,1-x-yGexCy Thin Films on Si(100) Substrate. MRS Online Proceedings Library 592, 13–17 (1999).

Download citation