Characterization of Ni- and Ni(Pt)-Silicide Formation on Narrow Polycrystalline Si Lines by Raman Spectroscopy

Abstract

The formation and thermal stability of Ni- and Ni(Pt) silicide on narrow polycrystalline Si (poly-Si) lines have been investigated using the non-destructive micro-Raman technique. The presence of Ni or Ni(Pt)Si on poly-Si lines with linewidths ranging from 0.5 gtm to 0.25 μm has been monitored by a distinct Raman peak at around 215 cm−1. Ni(Pt)Si was clearly identified to be present up to a RTA temperature of 900°C on narrow poly-Si lines as compared to pure NiSi which was found only up to 750°C. Raman scattering from the 100×100 μm2 poly-Si pads showed the formation of NiSi2 at 750°C for pure Ni-salicidation and 900°C for Ni(Pt)-salicidation respectively. The difference in the stability of NiSi on the poly-Si pads and lines is discussed in terms of agglomeration, inversion and/or nucleation of NiSi2that could be due to difference in nucleation sites and/or stress. In addition, a correlation between the line sheet resistance and the presence of Ni silicide was found using micro-Raman mapping along single poly-Si lines.

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References

  1. 1

    T. Morimoto, T. Ohguro, H. Sasaki Momose, T. Iinuma, I. Kunishima, K. Suguro, I. Katakabe, H. Nakajima, M. Tsuchiaki, M. Ono, Y. Katsumata, H. Iwai, IEEE Trans. Electron Devices, 42, 915(1995).

    CAS  Article  Google Scholar 

  2. 2

    D. Mangelinck, J. Y. Dai, S. K. Labili, C. S. Ho, and T. Osipowicz, Mat. Res. Soc. Spring Meeting, (San Francisco, April 5-9, 1999), accepted in Mat. Res. Soc. Symp. Proc.

    Google Scholar 

  3. 3

    I. De Wolf, D. J. Howard, A. Lauwers, K. Maex, and H. E. Maes, Appl. Phys. Lett., 70, 2262 (1997).

    Article  Google Scholar 

  4. 4

    E. H. Lim, G. Kanmasiri, S. J. Chua, H. Wong, K. L. Pey and K. H. Lee, IEEE Elee. Dev. Lett., 19, 171 (1998).

    CAS  Article  Google Scholar 

  5. 5

    I. De Wolf, D. J. Howard, M. Rasras, A. Lauwers, K. Maex, G. Groeseneken and H. E. Maes, 36th Annual International Reliability Physics Symposium, (Reno, Nevada, 1998).

    Google Scholar 

  6. 6

    P. S. Lee, D. Mangelinck, K. L. Pey, Z. X. Shen, J. Ding, T. Osipowicz, A. See, Electrochem. and Solid State Letters (in Press).

  7. 7

    S. Nygren, D. Caffin, M. Östling and F.M. d'Heurle, Appl. Surf. Sci., 53,87 (1991).

    CAS  Article  Google Scholar 

  8. 8

    E. G. Colgan, J. P. Gambino, B. Cunningham, Materials Chemistry and Physics, 46, 209 (1996).

    CAS  Article  Google Scholar 

  9. 9

    P. A. Temple and C. E. Hathaway, Phys. Rev. B, 7, 3685 (1973).

    CAS  Article  Google Scholar 

  10. 10

    F. M. d'Heurle, C. S. Petersson, J. E. E. Baglin, S. J. LaPlaca and C. Wong, J. Appl. Phys. 55, 4208 (1984).

    CAS  Article  Google Scholar 

  11. 11

    S. Perkowitz, Optical Characterization of Semiconductors: Infrared, Raman, and Photoluminescence Spectroscopy (Academic, New York, 1993).

    Google Scholar 

Download references

Acknowledgments

The authors would like to thank R. Lee and W. D. Wang for their technical support. This work is in part supported by CSM-special project, IMRE and NSTB Grant.

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Lee, P.S., Mangelinck, D., Pey, K.L. et al. Characterization of Ni- and Ni(Pt)-Silicide Formation on Narrow Polycrystalline Si Lines by Raman Spectroscopy. MRS Online Proceedings Library 591, 253–259 (1999). https://doi.org/10.1557/PROC-591-269

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