Two CdTe/ZnTe/Si samples were grown on Si (211) and Si(111) substrates by molecular beam epitaxy for use as lattice-matched substrates for HgCdTe growth. An As precursor was used before growing ZnTe. In order to understand the interface structure, the Zn diffusion problem and any effect due to As passivation, high resolution bright-field images, dark-field images and energy-dispersive X-ray spectra were studied. Fourier-filtered images have revealed details of the atomic arrangements and the dislocation defects at the interface. Local lattice parameters such as (111) d-spacings at different distances from the interface were measured to determine the Zn concentration based on Vegard’s law. The Zn concentration profiles were consistent with measurements from energy-dispersive X-ray spectroscopy. The As-passivated interface showed vacancy-type defects.
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This work is supported by the Air Force Research Laboratory under Contract F29601-98-C-0053 and a subcontract from EPIR Ltd. Electron microscopy was carried out in the Center for High Resolution Electron Microscopy at Arizona State University.
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Tsen, SC.Y., Smith, D.J., Crozier, P.A. et al. Interface Structure and Zn Diffusion in the CdTe/ZnTe/Si System Grown by MBE. MRS Online Proceedings Library 589, 197 (1999). https://doi.org/10.1557/PROC-589-197