The Atomic Structure of Mosaïc Grain Boundary Dislocations in GaN Epitaxial Layers

Abstract

The studied GaN layers are made of mosaic grains rotated around the c-axis by angles in the range 0–25°. Using high-resolution electron microscopy, anisotropic elasticity calculations and image simulation, we have analyzed the atomic structure of the edge threading dislocations. Here, we present an analysis of the Σ = 7 boundary using circuit mapping in order to define the Burgers vectors of the primary and secondary dislocations. The atomic structure of the primary ones was found to exhibit 5/7 and 8 atom cycles.

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Ruterana, P., Potin, V., Nouet, G. et al. The Atomic Structure of Mosaïc Grain Boundary Dislocations in GaN Epitaxial Layers. MRS Online Proceedings Library 589, 191 (1999). https://doi.org/10.1557/PROC-589-191

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