The Atomic Structure of Mosaïc Grain Boundary Dislocations in GaN Epitaxial Layers

MRS Online Proceedings Library volume 589, Article number: 191 (1999) Cite this article

Abstract

The studied GaN layers are made of mosaic grains rotated around the c-axis by angles in the range 0–25°. Using high-resolution electron microscopy, anisotropic elasticity calculations and image simulation, we have analyzed the atomic structure of the edge threading dislocations. Here, we present an analysis of the Σ = 7 boundary using circuit mapping in order to define the Burgers vectors of the primary and secondary dislocations. The atomic structure of the primary ones was found to exhibit 5/7 and 8 atom cycles.

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Affiliations

  1. Groupe d’Etudes des Semiconducteurs, Université de Montpellier II, Place Eugene Bataillon, 34095, Montpellier cedex 5, France

    P. Ruterana, V. Potin, G. Nouet & R.C. Pond

  2. Laboratoire d'Etudes et de Recherches sur les Matériaux, UPRESA 6004 CNRS, Institut des Sciences de la Matière et du Rayonnement, 6 boulevard Maréchal Juin, 14050, Caen Cedex, France

    P. Ruterana & G. Nouet

  3. Department of Materials Science and Engineering, The University of Liverpool, Liverpool, L69 3 GH, England

    R.C. Pond

Authors
  1. P. Ruterana
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  2. V. Potin
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  3. G. Nouet
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  4. R.C. Pond
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Correspondence to P. Ruterana.

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Ruterana, P., Potin, V., Nouet, G. et al. The Atomic Structure of Mosaïc Grain Boundary Dislocations in GaN Epitaxial Layers. MRS Online Proceedings Library 589, 191 (1999). https://doi.org/10.1557/PROC-589-191

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