Angle-Resolved XPS Studies of Interfacial Bonding States in Silicon oxynitrides Fabricated Using Different Thermal Methodologies

MRS Online Proceedings Library volume 586, Article number: 99 (1999) Cite this article

Abstract

Silicon oxynitride films, fabricated by direct thermal growth and annealing in N2O or NO, were analyzed by Angle-Resolved X-ray Photoelectron Spectroscopy (ARXPS). It is seen that for the samples processed in N2O, N is bonded as Si3N4 only, irrespective of whether the fabrication was done on bare Si or on an oxide pre-grown in O2. But the films processed in NO depict additional bonding arrangements, namely, non-stoichiometric SiOxNy, (Si-)2-N-O, and Si-N(-O)2. These bonding states are found to be concentrated in a higher proportion above the oxynitride/substrate interface. Further, it is seen that annealing of a pre-grown oxide in NO for 30 min incorporates the same bonding states as by direct growth in NO for as long as 120 min. Also, a critical N concentration (between 1.9% and 2.3%) is required for the incorporation of the Si-N(-O)2 structure, observed at 400.7 eV. Besides enhancing the overall understanding of the progress of silicon oxynitridation process in N2O and NO, these findings can help significantly towards developing process-property relationships for incorporation of N with the desired bonding state(s) at specific positions within an oxynitride film.

This is a preview of subscription content, access via your institution.

Access options

Buy single article

Instant access to the full article PDF.

US$ 39.95

Tax calculation will be finalised during checkout.

References

  1. 1.

    D.A. Buchanan, IBM J. Res. Develop. 43, 245 (1999).

    CAS  Article  Google Scholar 

  2. 2.

    T. Aoyama, K. Suzuki, H. Tashiro, Y. Tada, and K. Horiuchi, J. Electrochem. Soc. 145, 689 (1998).

    CAS  Article  Google Scholar 

  3. 3.

    T. Ito, T. Nakamura, and H. Ishikawa, IEEE Trans. Elect. Devices 29, 498 (1982).

    Article  Google Scholar 

  4. 4.

    S.A. Ajuria, J.T. Fitch, D. Workman, and T.C. Mele, J. Electrochem. Soc. 140, Li 13 (1993).

    Article  Google Scholar 

  5. 5.

    R.I. Hegde, B. Maiti, and P.J. Tobin, J. Electrochem. Soc. 144, 1081 (1997).

    CAS  Article  Google Scholar 

  6. 6.

    I. Banerjee and D. Kuzminov, Appl. Phys. Lett. 62,1541 (1993).

    CAS  Article  Google Scholar 

  7. 7.

    J. F. Moulder, W. F. Stickle, P.E. Sobol, and K. D. Bomben, Handbook of X-ray Photoelectron Spectroscopy, (Perkin Elmer Corp., Eden Prairie, MN, (1992), p. 43.

    Google Scholar 

  8. 8.

    M.J. Hartig and P.J. Tobin, J. Electrochem. Soc. 143, 1753 (1996).

    CAS  Article  Google Scholar 

  9. 9.

    M. Bhat, J. Ahn, D.L. Kwong, M. Arendt, and J.M. White, Appl. Phys. Lett. 64, 1168 (1994).

    CAS  Article  Google Scholar 

  10. 10.

    K. Prabhakaran, Y. Kobayashi, and T. Ogino, Appl. Surf. Sci. 130–132, 182 (1998).

    Article  Google Scholar 

  11. 11.

    G.-M. Rignanese, A. Pasquarello, J.-C. Charlier, X. Gonze, and R. Car, Phys. Rev. Lett. 79,5174 (1997).

    CAS  Article  Google Scholar 

  12. 12.

    J.R. Shallenberger, D.A. Cole, and S.W. Novak, J. Vac. Sci. Tech. A 17, 1086 (1999).

    CAS  Article  Google Scholar 

  13. 13.

    R.J. Hussey, T.L. Hoffman, Y. Tao, and M.J. Graham, J. Electrochem. Soc. 143, 221 (1996).

    CAS  Article  Google Scholar 

  14. 14.

    Z.H. Lu, S.P. Tay, R. Cao, and P. Pianetta, Appl. Phys. Lett. 67, 2836 (1995).

    CAS  Article  Google Scholar 

  15. 15.

    B.C. Smith and H.H. Lamb, J. Appl. Phys. 83, 7635 (1998).

    CAS  Article  Google Scholar 

  16. 16.

    S.R. Kaluri and D.W. Hess, Appl. Phys. Lett. 69, 1053 (1996).

    CAS  Article  Google Scholar 

  17. 17.

    R.I. Hegde, P.J. Tobin, K.G. Reid, B. Maiti, and S.A. Ajuria, Appl. Phys. Lett. 66, 2882 (1995).

    CAS  Article  Google Scholar 

  18. 18.

    M. Bhat, G.W. Yoon, J. Kim, and D.L. Kwong, Appl. Phys. Lett. 64, 2116 (1994).

    CAS  Article  Google Scholar 

  19. 19.

    T. Yoshida, T. Hashizume, and H. Hasegawa, Jpn. J. Appl. Phys. 36, 1453 (1997).

    CAS  Article  Google Scholar 

  20. 20.

    D.G.J. Sutherland, et al. J. Appl. Phys. 78, 6761 (1995).

    CAS  Article  Google Scholar 

  21. 21.

    Z.H. Lu, S.P. Tay, R. Cao, and P. Pianetta, Appl. Phys. Lett. 67, 2836 (1995).

    CAS  Article  Google Scholar 

Download references

Author information

Affiliations

  1. Advanced Materials Research Laboratory, Department of Chemical Engineering, University of Illinois at Chicago, 810 South Clinton Street, Chicago, IL, 60607, USA

    Sanjit Singh Dang & Christos G. Takoudis

Authors
  1. Sanjit Singh Dang
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Christos G. Takoudis
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Sanjit Singh Dang.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Dang, S.S., Takoudis, C.G. Angle-Resolved XPS Studies of Interfacial Bonding States in Silicon oxynitrides Fabricated Using Different Thermal Methodologies. MRS Online Proceedings Library 586, 99 (1999). https://doi.org/10.1557/PROC-586-99

Download citation