Angle-Resolved XPS Studies of Interfacial Bonding States in Silicon oxynitrides Fabricated Using Different Thermal Methodologies

Abstract

Silicon oxynitride films, fabricated by direct thermal growth and annealing in N2O or NO, were analyzed by Angle-Resolved X-ray Photoelectron Spectroscopy (ARXPS). It is seen that for the samples processed in N2O, N is bonded as Si3N4 only, irrespective of whether the fabrication was done on bare Si or on an oxide pre-grown in O2. But the films processed in NO depict additional bonding arrangements, namely, non-stoichiometric SiOxNy, (Si-)2-N-O, and Si-N(-O)2. These bonding states are found to be concentrated in a higher proportion above the oxynitride/substrate interface. Further, it is seen that annealing of a pre-grown oxide in NO for 30 min incorporates the same bonding states as by direct growth in NO for as long as 120 min. Also, a critical N concentration (between 1.9% and 2.3%) is required for the incorporation of the Si-N(-O)2 structure, observed at 400.7 eV. Besides enhancing the overall understanding of the progress of silicon oxynitridation process in N2O and NO, these findings can help significantly towards developing process-property relationships for incorporation of N with the desired bonding state(s) at specific positions within an oxynitride film.

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Correspondence to Sanjit Singh Dang.

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Dang, S.S., Takoudis, C.G. Angle-Resolved XPS Studies of Interfacial Bonding States in Silicon oxynitrides Fabricated Using Different Thermal Methodologies. MRS Online Proceedings Library 586, 99 (1999). https://doi.org/10.1557/PROC-586-99

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