Full Band Monte Carlo Simulation of Short Channel MOSFETs in 4H and 6H-SiC

Abstract

This is a presentation of a full band Monte Carlo (MC) study, which compares electron transport and device performance for 4H and 6H-SiC 100 nm n-channel MOSFETs. The model used for the electrons is based on data from a full potential band structure calculation using the Local Density Approximation (LDA) to the Density Functional Theory (DFT). For the holes the transport is based on a three band k-p model including spin orbit interaction. The two polytypes are compared regarding surface mobilities obtained with the program, as well as transconductance, unit current gain frequency, carrier velocity, I–V characteristics and energy distribution in the channel for the MOSFETs.

This is a preview of subscription content, access via your institution.

References

  1. 1.

    J. N. Shenoy, J. A. Cooper Jr and M. R. Melloch, IEEE Dev. Lett. 18, 93 (1997).

    CAS  Article  Google Scholar 

  2. 2.

    J. Spitz, M. R. Melloch, J. A. Cooper Jr and A. Capano, IEEE Dev. Lett 19, 100 (1998).

    CAS  Article  Google Scholar 

  3. 3.

    P. Kdckell, B. Wenzien and F. Bechstedt, Phys. Rev. B 50 (15) 10761 (1994).

    Article  Google Scholar 

  4. 4.

    C. Persson and U. Lindefelt, J. Appl Phys. 82 (11), 5,496 (1997).

    Article  Google Scholar 

  5. 5.

    K. Tsukioka, D. Vasileska and D. K. Ferry, Physica B 185, 466 (1993).

    CAS  Article  Google Scholar 

  6. 6.

    H- E. Nilsson, U. Sannemo and C. S. Petersson, J. Appl. Phys. 80 (6), 3365–3369 (1996).

    CAS  Article  Google Scholar 

  7. 7.

    M. Schadt, G. Pensl, R. P. Devaty, W. J. Choyke, R. Stein and D. Stephani, Appl. Phys. Lett. 65, 3120 (1994).

    CAS  Article  Google Scholar 

  8. 8.

    W. J. Schaffer, G. H. Negley, K. G. Irvine and J. W. Palmour in Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors, edited by C. H. Carter, G. Gildenbalt, S. Nakamura, and R. Nemanich, (Mater. Res. Soc. Proc. 339, Pittsburgh, PA 1994) pp. 595–600.

    CAS  Google Scholar 

  9. 9.

    E. Sangiorgi and M. R. Pinto, IEEE Trans. on Elec. Dev. 39 (2), 356–361 (1992).

    Article  Google Scholar 

  10. 10.

    W. Fawcett, A. D. Boardman and S. Swain, J. Phys. Chem. Solids, 31, 1963 (1970).

    CAS  Article  Google Scholar 

  11. 11.

    Avant! Corporation, TCAD Business Unit, Fremont, California. Medici, Two-Dimensional Device Simulation Program, Version 4.1, Users Manual, July 1998.

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to M. Hjelm.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Hjelm, M., Nilssoni, HE., Dubaric, E. et al. Full Band Monte Carlo Simulation of Short Channel MOSFETs in 4H and 6H-SiC. MRS Online Proceedings Library 572, 69 (1999). https://doi.org/10.1557/PROC-572-69

Download citation