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Full Band Monte Carlo Simulation of Short Channel MOSFETs in 4H and 6H-SiC

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Abstract

This is a presentation of a full band Monte Carlo (MC) study, which compares electron transport and device performance for 4H and 6H-SiC 100 nm n-channel MOSFETs. The model used for the electrons is based on data from a full potential band structure calculation using the Local Density Approximation (LDA) to the Density Functional Theory (DFT). For the holes the transport is based on a three band k-p model including spin orbit interaction. The two polytypes are compared regarding surface mobilities obtained with the program, as well as transconductance, unit current gain frequency, carrier velocity, I–V characteristics and energy distribution in the channel for the MOSFETs.

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Authors and Affiliations

  1. Department of Information Technology, Mid-Sweden University, S-851 70, Sundsvall, Sweden

    M. Hjelm, H-E. Nilssoni & E. Dubaric

  2. Department of Solid State Electronics, Kungl. Tekniska Högskolan (KTH), Elektrum 229, S-164 40, Kista, Sweden

    M. Hjelm, H-E. Nilssoni, E. Dubaric & C. S. Petersson

  3. Department of Physics and Measurement Technology, Linköping University, S-581 83, Linköping, Sweden

    C. Persson

  4. Institut für Festkörpertheorie und Theoretische Optik, Max-Wien-Platz 1, 07743, Jena, Germany

    P. Käckell

Authors
  1. M. Hjelm
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  2. H-E. Nilssoni
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  3. E. Dubaric
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  4. C. Persson
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  5. P. Käckell
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  6. C. S. Petersson
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Correspondence to M. Hjelm.

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Hjelm, M., Nilssoni, HE., Dubaric, E. et al. Full Band Monte Carlo Simulation of Short Channel MOSFETs in 4H and 6H-SiC. MRS Online Proceedings Library 572, 69 (1999). https://doi.org/10.1557/PROC-572-69

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  • DOI: https://doi.org/10.1557/PROC-572-69

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