Abstract
SiC power switching devices have demonstrated performance figures of merit far beyond the silicon theoretical limits, but much work remains before commercial production will be feasible. A significant fraction of the remaining work centers on materials science issues. This paper reviews the current status of unipolar power switching devices in SiC and identifies the major technological and material science barriers that need to be overcome.
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References
G. Ziegler, P. Lanig, D. Theis, and C. Weyrich, IEEE Trans. Electr. Dev. 30 227 (1983).
C.H. Carter Jr, L. Tang, and R. F. Davis, 4th National Review Meeting on the Growth and Characterization of SiC, Raleigh, NC, USA, 1987; U.S. Patent No. 4,866,005 (Sept. 12, 1989) R. F. Davis, C. H. Carter, Jr., and C. E. Hunter.
Cree Research, Inc., Durham, NC.
B. J. Baliga, IEEE Electron Device Lett. 66 455 (1989).
J. A. Cooper Jr, Physica Stat. Solidi (a), 162 305 (1997).
K. J. Schoen, J. M. Woodall, J. A. Cooper Jr, and M. R. Melloch, IEEE Trans. Electr. Dev. 45, 1595 (1998).
H. Matsunami, T. Ueda, and H. Nishino, Proc. Mat. Res. Soc. Symp. 162, 397 (1990).
A. Itoh, T. Kimoto, and H. Matsunami, IEEE Electron Device Lett. 66 139 (1996).
D. Alok, B. J. Baliga, and P. K. McLarty, IEEE Electron Device Lett. 66 394 (1994).
R. Singh and J. W. Palmour, Proc. Int’l. Symp. on Power Semi. Devices and ICs, Weimar, Germany, May 26-29, 1997.
G. M. Dolny, D. T. Morisette, P. M. Shenoy, M. Zafrani, J. Gladish, J. M. Woodall, J. A. Cooper Jr, and M. R. Melloch, IEEE Device Res. Conf., Charlottesville, VA, June 22 - 24, 1998.
C. H. Carter Jr, Cree Research, Inc., Durham, NC, private communication.
S. Wang, M. Dudley. C. H. Carter Jr., and H. S. Hong, Mat. Res. Soc. Symp. Proc., 339, 735 (1994).
P. G. Neudeck and C. Fazi, IEEE Electron Device Lett. 66 96 (1997).
H. M. McGlothlin, D. T. Morisette, J. A. Cooper, and M. R. Melloch, unpublished.
J. N. Shenoy, G. L. Chindalore, M. R. Melloch, J. A. Cooper Jr, J. W. Palmour, and K. G. Irvine, J. Electronic Mat’ls, 24, 303 (1995).
L. A. Lipkin and J. W. Palmour, J. Electr. Mat’ls, 25, 909 (1996).
M. K. Das, J. A. Cooper Jr, and M. R. Melloch, J. Electr. Mat’ls, 27 353 (1998).
J. N. Shenoy, M. K. Das, J. A. Cooper Jr, M. R. Melloch, and J. W. Palmour, J. Appl. Physics, 79, 3042 (1996).
M. M. Maranowski and J. A. Cooper Jr, IEEE Trans. Electr. Dev. 46, (1999).
M. K. Das, J. A. Cooper Jr, M. R. Melloch, and M. A. Capano, Semi. Interface Specialists Conf, San Diego, CA, December 3 - 5, 1998.
M. A. Capano, S- H. Ryu, M. R. Melloch, and J. A. Cooper Jr, J. Electr. Mat’ls, 27, 370 (1998).
R. Santharumar, M. K. Das, M. A. Capano, J. A. Cooper, and M. R. Melloch, unpublished.
P.M. Shenoy and B. J. Baliga, IEEE Electron Device Lett., 18, 589 (1997).
J. Tan, J. A. Cooper Jr, and M. R. Melloch, IEEE Electron Device Lett., 19, 487 (1998).
J. Spitz, M. R. Melloch, J. A. Cooper Jr, and M. A. Capano, IEEE Electron Device Lett., 19 100 (1998).
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Cooper, J.A., Ryu, S.H., Li, Y. et al. SiC Power Electronic Devices, MOSFETs and Rectifiers. MRS Online Proceedings Library 572, 3 (1999). https://doi.org/10.1557/PROC-572-3
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DOI: https://doi.org/10.1557/PROC-572-3