An advanced method based on x-ray imaging is presented which allows us to visualize the ongoing processes during physical vapor transport (PVT) growth of SiC. Using a high resolution and high speed x-ray imaging detector based on image plates and digital recording we are able to follow the SiC bulk single crystal growth as well as the evolution of the SiC powder source inside the inductively heated graphite crucible on-line and quasi-continuously.
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Y.M. Tairov and V.F. Tsvetkov, Investigation of growth processes of ingots of silicon carbide single crystals, J. Cryst.Growth 43, 209, 1978.
G. Ziegler, P. Lanig, D. Theis and C. Weyerich, Single crystal growth of SiC substrate material for blue light emitting diodes, IEEE Trans. Electron. Devices 30, 277, 1983.
R. Eckstein, D. Hofmann, Y. Makarov, St. G. Muiller, G. Pensl, E. Schmitt and A. Winnacker, Analysis of the sublimation growth process of silicon carbide bulk crystals, Mat. Res. Soc. Symp. Proc. 423, 215–220, 1996.
D. Hofmann, R. Eckstein, M. Kiölbl, Y. Makarov, St. G. Mtller, E. Schmitt, A. Winnacker, R. Rupp, R. Stein and J. Völkl, SiC-bulk growth by physical vapor transport and its global modeling, J. Cryst.Growth 174, 669–674, 1997.
A. Winnacker, x-ray imaging with photostimulable storage phosphors and future trends, Physica Medica IX 2–3, 95-101, 1993.
M. Thorns, H. Burzlaff, A. Kinne, J. Lange, H. von Seggern, R. Spengler and A. Winnacker, An improved x-ray image plate detector for diffractometry, Mater.Sci.Forum 107 (1), 228–231, 1995.
P.G. Barber, R.K. Crouch, A.L. Fripp, W.J. Debnam, R.F. Berry and R. Simchick, A procedure to visualize the melt-solid interface in Bridgeman grown germanium and lead tin telluride, J. Cryst.Growth 74, 228–230, 1986.
K. Kakimoto, M. Eguchi, H. Watanaba and T. Hibiya, In-situ observation of impurity diffusion boundary layer in silicon Czrochalski growth, J. Cryst.Growth 99, 665–669, 1990.
T.A. Campbell and J.N. Koster, Visualization of liquid-solid interface morphologies in gallium subject to natural convection, J. Cryst.Growth 140, 414–425, 1994.
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Wellmann, P.J., Bickermann, M., Grau, M. et al. Online Monitoring of PVT SiC Bulk Crystal Growth Using Digital X-Ray Imaging. MRS Online Proceedings Library 572, 259 (1999). https://doi.org/10.1557/PROC-572-259