The comparative studies of chemical vapor deposition grown epitaxial layers and of sublimation sandwich method grown 4H-SiC samples

Abstract

Thermal admittance spectroscopy was used to characterize the shallow dopants in chemical vapor deposition (CVD) grown thin films and in sublimation sandwich method (SSM) grown 4H-SiC layers. The values of the activation energy levels of EC − 0.054 eV for Nitrogen at the hexagonal site and of EC − 0.10 eV for Nitrogen at the cubic site were indices of comparison. The net carrier concentrations (ND − NV) of the films were determined by capacitance-voltage measurements. The net carrier concentrations for the SSM films ranged from 2 × 1017 to 7 × 1017 cm−3. The two Nitrogen levels were observed in the CVD films. Hopping conduction with an activation energy of EC −0.0058 eV was observed in one SSM sample having ND − NV = 7 × 1017 cm−3.

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Correspondence to A. O. Evwaraye.

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Evwaraye, A.O., Smith, S.R. & Mitchel, W.C. The comparative studies of chemical vapor deposition grown epitaxial layers and of sublimation sandwich method grown 4H-SiC samples. MRS Online Proceedings Library 572, 237 (1999). https://doi.org/10.1557/PROC-572-237

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