Thermal admittance spectroscopy was used to characterize the shallow dopants in chemical vapor deposition (CVD) grown thin films and in sublimation sandwich method (SSM) grown 4H-SiC layers. The values of the activation energy levels of EC − 0.054 eV for Nitrogen at the hexagonal site and of EC − 0.10 eV for Nitrogen at the cubic site were indices of comparison. The net carrier concentrations (ND − NV) of the films were determined by capacitance-voltage measurements. The net carrier concentrations for the SSM films ranged from 2 × 1017 to 7 × 1017 cm−3. The two Nitrogen levels were observed in the CVD films. Hopping conduction with an activation energy of EC −0.0058 eV was observed in one SSM sample having ND − NV = 7 × 1017 cm−3.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
M.M. Anikin, V. A. Dmitriev, and V. E. Chelnokov,176 Meeting of Electrochem. Society (Hollywood FL)
P.A. Ivanov and V. E. Chelnokov, Semicond. Sci. Technol. 7, 863, (1992)
A. O. Evwaraye, S. R. Smith. and W. C. Mitchel, J. Appl. Phys. 79, 7726, (1996)
W. Gotz, A. Schoner, G. Pensi, W. Suttrop, W. J. Choyke, R. Stein, and S Leibenzeder, J. Appl. Phys. 73, 3332 (1993)
A. O. Evwaraye, S. R. Smith, M. Skowronski, and W. C. Mitchel, J. Appl. Phys. 75, 3472 (1994)
D. L. Losee, J. Appl. Phys. 46, 2204 (1975) see also
A. O. Evwaraye, S. R. Smith, and W. C. Mitchel, J. Appl. Phys. 75, 3472 (1994)
W. C. Mitchel, A. O. Evwaraye, S. R. Smith, and M. D. Roth, J. Electron. Mater. 26, 113 1997)
About this article
Cite this article
Evwaraye, A.O., Smith, S.R. & Mitchel, W.C. The comparative studies of chemical vapor deposition grown epitaxial layers and of sublimation sandwich method grown 4H-SiC samples. MRS Online Proceedings Library 572, 237 (1999). https://doi.org/10.1557/PROC-572-237