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The comparative studies of chemical vapor deposition grown epitaxial layers and of sublimation sandwich method grown 4H-SiC samples

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Abstract

Thermal admittance spectroscopy was used to characterize the shallow dopants in chemical vapor deposition (CVD) grown thin films and in sublimation sandwich method (SSM) grown 4H-SiC layers. The values of the activation energy levels of EC − 0.054 eV for Nitrogen at the hexagonal site and of EC − 0.10 eV for Nitrogen at the cubic site were indices of comparison. The net carrier concentrations (ND − NV) of the films were determined by capacitance-voltage measurements. The net carrier concentrations for the SSM films ranged from 2 × 1017 to 7 × 1017 cm−3. The two Nitrogen levels were observed in the CVD films. Hopping conduction with an activation energy of EC −0.0058 eV was observed in one SSM sample having ND − NV = 7 × 1017 cm−3.

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Authors and Affiliations

  1. MLPO, Air Force Research Laboratory, Wright-Patterson Air Force, Base, Ohio, 45422-7077, USA

    A. O. Evwaraye (Materials Directorate)

  2. University of Dayton, Physics Department, 300 College Park, Dayton, Ohio, 45469-2314, USA

    S. R. Smith

  3. University of Dayton Research Institute, 300 College Park., Dayton, Ohio, 45469-0167, USA

    W. C. Mitchel

Authors
  1. A. O. Evwaraye
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  2. S. R. Smith
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  3. W. C. Mitchel
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Evwaraye, A.O., Smith, S.R. & Mitchel, W.C. The comparative studies of chemical vapor deposition grown epitaxial layers and of sublimation sandwich method grown 4H-SiC samples. MRS Online Proceedings Library 572, 237 (1999). https://doi.org/10.1557/PROC-572-237

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  • DOI: https://doi.org/10.1557/PROC-572-237

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