On the Role of Foreign Atoms in the Optimization of 3C-SiC/Si Heterointerfaces


3C-SiC/Si structures with Ge incorporation are elaborated by solid source molecular beam epitaxy (SSMBE). A comparison of the flatness of the SiC-surface and the interface between SiC and Si by comparing the deposition with and without Ge is made. The results are analyzed within the framework of a theoretical approach based on the theory of elasticity.

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Masri, P., Moreaud, N., Averous, M. et al. On the Role of Foreign Atoms in the Optimization of 3C-SiC/Si Heterointerfaces. MRS Online Proceedings Library 572, 213 (1999). https://doi.org/10.1557/PROC-572-213

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