On the Role of Foreign Atoms in the Optimization of 3C-SiC/Si Heterointerfaces

MRS Online Proceedings Library volume 572, Article number: 213 (1999) Cite this article

Abstract

3C-SiC/Si structures with Ge incorporation are elaborated by solid source molecular beam epitaxy (SSMBE). A comparison of the flatness of the SiC-surface and the interface between SiC and Si by comparing the deposition with and without Ge is made. The results are analyzed within the framework of a theoretical approach based on the theory of elasticity.

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Affiliations

  1. Groupe d’Etude des Semiconducteurs, CNRS, UMR 5650, Université Montpellier 2, cc074, Place E. Bataillon, 34095, Montpellier cedex, France

    P. Masri, N. Moreaud & M. Averous

  2. TU Ilmenau, Institut für Festkörperelektronik, PSF 100565, 98684, Ilmenau, Germany

    Th. Stauden, T. Wöhner & J. Pezoldt

Authors
  1. P. Masri
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  2. N. Moreaud
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  3. M. Averous
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  4. Th. Stauden
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  5. T. Wöhner
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  6. J. Pezoldt
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Correspondence to P. Masri.

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Masri, P., Moreaud, N., Averous, M. et al. On the Role of Foreign Atoms in the Optimization of 3C-SiC/Si Heterointerfaces. MRS Online Proceedings Library 572, 213 (1999). https://doi.org/10.1557/PROC-572-213

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