On the Role of Foreign Atoms in the Optimization of 3C-SiC/Si Heterointerfaces

Abstract

3C-SiC/Si structures with Ge incorporation are elaborated by solid source molecular beam epitaxy (SSMBE). A comparison of the flatness of the SiC-surface and the interface between SiC and Si by comparing the deposition with and without Ge is made. The results are analyzed within the framework of a theoretical approach based on the theory of elasticity.

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References

  1. 1.

    T. Hatayama, N. Tanaka, T. Fuyuki, and H. Matsunami, J. Electronic Mater. 26, p. 160 (1997).

    CAS  Article  Google Scholar 

  2. 2.

    K. Zekentes and K. Tsagaraki, Mater. Sci. Eng. B56, (1999), in press

  3. 3.

    S. Mitchel, M. G. Spencer and K. Wongchotigul, Mater. Sci. Forum 264–268, 231 (1998).

    Google Scholar 

  4. 4.

    P. Masri, Phys. Rev. B52, 16627 (1995).

    Article  Google Scholar 

  5. 5.

    A. Fissel, K. Pfenninghaus, U. Kaiser, J. Kräuβlich, H. Hobert, B. Schriiter and W. Richter, Mater. Sci. Forum 264–268, 255 (1998).

    Google Scholar 

  6. 6.

    J. Pezoldt, V. Cimalla, Th. Stauden, G. Ecke, G. Eichhorn, F. Scharmann, D. Schipanski, Diam. Rel. Mater. 6, 1311 (1997).

    CAS  Article  Google Scholar 

  7. 7

    T. Ichikawa, S. Ino, Surf. Sci., 136 267 (1984)

    CAS  Article  Google Scholar 

  8. 8

    P. Martensson, W.-X. Ni, and G.V. Hansson, Phys. Rev. B36, 5974 (1987).

    Article  Google Scholar 

  9. 9

    B. Zhang, J.E. Northrup,, M.L. Cohen, Surf. Sci. 145, L465 (1984).

    CAS  Article  Google Scholar 

  10. 10

    S. Hasegawa, H. Iwasaki, S.-T. Li, S. Nakamura, Phys. Rev. B32 6949 (1985).

    Article  Google Scholar 

  11. 11

    S. Ruvimov, E. Bugiel, H.J. Osten, J. Appl. Phys. 78, 2323 (1995).

    CAS  Article  Google Scholar 

  12. 12.

    See, for example, J. W. Matthews, in Epitaxial growth, Part B, Academic Press, New York, 505 (1975).

    Google Scholar 

  13. 13.

    Sverre Froyen, Su-Huai Wei, Alex Zunger, Phys. Rev. B38 10124 (1988).

    Article  Google Scholar 

  14. 14.

    C. Kittel, in Introduction to Solid State Physics, 3rd edn., Wiley, New York, ((1968) p. 119 Eq. (31).

    Google Scholar 

  15. 15.

    K. Eberl, S. S. Iyer, J. C. Tsang, M. S. Goorsky and F. K. Legoues, J. Vac. Sci. Technol. 110, 934 (1992).

    Article  Google Scholar 

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Masri, P., Moreaud, N., Averous, M. et al. On the Role of Foreign Atoms in the Optimization of 3C-SiC/Si Heterointerfaces. MRS Online Proceedings Library 572, 213 (1999). https://doi.org/10.1557/PROC-572-213

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