Characterization of P-Type Buffer Layers for SiC Microwave Device Applications


Low-loped p-type silicon carbide buffer layers are grown by chemical vapor deposition on conducting and semi-insulating substrates. Capacitance-voltage and electrical admittance techniques are developed for accurate non-destructive characterization. The electrical admittance techniques suggested are capable of measuring the resistivity in a very wide range, up to 7 orders of magnitude. MESFET devices using thick buffer layers on conducting substrates are reported with Ft=8.4 GHz and Fmax=32 GHz.

This is a preview of subscription content, access via your institution.


  1. 1.

    J.W. Palmour, C.E. Weitzel, K.J. Nordquist and C.H. Carter, IOP Conf. Ser. 137, 495 (1994).

    CAS  Google Scholar 

  2. 2.

    S.T. Allen, R.A. Sadler, T.S. Alcorn, J. Sumakeris, R.C. Glass, C.H. Carter, and J W. Palmour, Materials Science Forum 264–268, 953 (1998).

    Google Scholar 

  3. 3.

    O. Noblanc, C. Arnodo, E. Chartier and C. Brylinski, Materials Science Forum 264–268, 949 (1998)

    Google Scholar 

  4. 4.

    Epigress AB, Ideon Science Park, S-223 70 Lund, Sweden.

  5. 5.

    C.E. Weitzel, Materials Science Forum 264–268, 909 (1998).

    Google Scholar 

Download references

Author information



Corresponding author

Correspondence to A. O. Konstantinov.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Konstantinov, A.O., Karlsson, S., Nilsson, P.Å. et al. Characterization of P-Type Buffer Layers for SiC Microwave Device Applications. MRS Online Proceedings Library 572, 197 (1999).

Download citation