Low-loped p-type silicon carbide buffer layers are grown by chemical vapor deposition on conducting and semi-insulating substrates. Capacitance-voltage and electrical admittance techniques are developed for accurate non-destructive characterization. The electrical admittance techniques suggested are capable of measuring the resistivity in a very wide range, up to 7 orders of magnitude. MESFET devices using thick buffer layers on conducting substrates are reported with Ft=8.4 GHz and Fmax=32 GHz.
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Konstantinov, A.O., Karlsson, S., Nilsson, P.Å. et al. Characterization of P-Type Buffer Layers for SiC Microwave Device Applications. MRS Online Proceedings Library 572, 197 (1999). https://doi.org/10.1557/PROC-572-197