Structure and Properties of Quasi-Monocrystalline Silicon Thin-Films

Abstract

This contribution describes the preparation of a single crystalline Si thin-film separable from a reusable Si wafer. The method relies on: i) etching of a porous silicon layer ii) high-temperature annealing and iii) transfer of the recrystallized film to a foreign substrate. As a result of the process we obtain 1 to 30 µm thick monocrystalline Si films that contain voids with a size of several 100 nm. Due to its “swiss-cheese-like” structure the material is termed as “quasi-monocrystalline Si”. Sub micrometer thin layers are almost compact, while in several micron thick films voids cause scattering of incident light. This effect increases the effective absorption coefficient by light trapping and seems promising for the application of our quasi-monocrystalline films in thin film solar cells. Quasi-monocrystalline p-type silicon reaches a hole mobility of 78 cm2/ Vs measured by room-temperature Hall-effect. High carrier mobility and adjustable optical characteristics make these films suitable for display and photovoltaic applications. Quasi-monocrystalline films are processed using conventional high-temperature Si processing; finished devices can be transferred to a foreign substrate such as glass, while the starting wafer can be reused several times.

This is a preview of subscription content, access via your institution.

References

  1. 1

    R. B. Bergmann, T. J. Rinke, L. Oberbeck, and R. Dassow, in Perspectives, Science and Technologies for Novel Silicon on Insulator Devices, Nato Advanced Research Workshop, Kyiv, Ukraine (1998), in print.

    Google Scholar 

  2. 2

    R. Dassow, J. R. Köhler, M. Grauvogl, R.B. Bergmann, and J. H. Wemer, in Polycrystalline Semiconductors V - Bulk Materials, Thin-films, and Devices, edited by J. H. Werner, H. P. Strunk, and H. W. Schock (Scitech Publ., Uettikon am See, Switzerland, 1999), in print.

  3. 3

    J. P. Salerno, Single Crystal Silicon AMLCDs, in Proc. SID-International Display Research Conference, 1994, p.39.

    Google Scholar 

  4. 4

    M. Bruel, Nucl. Instrum. Methods B108, 313 (1996).

    CAS  Article  Google Scholar 

  5. 5

    Q. -Y. Tong, R. Scholz, U. Gösele, T. -H. Lee, L. -J. Huang, and Y. -L. Tan, Appl. Phys. Lett. 72, 49 (1998).

    CAS  Article  Google Scholar 

  6. 6

    C. H. Yun, A. B. Wengrow, N. W. Cheung, Y. Zheng, R. J. Welty, Z. F. Guan, K. V. Smith, P. M. Asbeck, E. T. Yu, and S. S. Lau, Appl. Phys. Lett. 73, 2772 (1998).

    CAS  Article  Google Scholar 

  7. 7

    K. Sakaguchi, N. Sato, K. Yamagata, T. Atoji, Y. Fujiyama, J. Nakayama, and T. Yonehara, IEICE Trans. Electron. E80-C, 378 (1997).

    Google Scholar 

  8. 8

    H. Tayanaka, K. Yamauchi, T. Matsuhita, in Proc. 2nd World Conf on Photovolt. Energy Conv., edited by J. Schmid, H. A. Ossenbrink, P. Helm, H. Ehmann, and E. D. Dunlop (E. C. Joint Res. Centre, Luxembourg, 1998) p.1272.

  9. 9

    R. Brendel, H. Artmann, S. Oelting, W. Frey, J. H. Werner, and H. J. Queisser, Appl. Phys. A67, 151 (1998).

    CAS  Article  Google Scholar 

  10. 10

    M.G. Berger, M. Thönissen, W. Theiß and H. Münder in Structural and Optical Properities of Porous Silicon Nanostructures, edited by G. Amato, C. Delerue and H.J. Bardeleben (Overseas Publishers Association, Amsterdam, 1997), p.557.

  11. 11

    S. Billat, M. Thönissen, R. Arens-Fischer, M.G. Berger, M. Krüger, and H. Lüith, Thin Solid Films, 297, 22 (1997).

    CAS  Article  Google Scholar 

  12. 12

    T. J. Rinke, R. B. Bergmann, R. Brüggemann, and J.H. Werner, in Polycrystalline Semiconductors V - Bulk Materials, Thin-films, and Devices, edited by J. H. Werner, H. P. Strunk, and H. W. Schock (Scitech Publ., Uettikon am See, Switzerland, 1999), in print.

  13. 13

    G. Bomchil, R. Herino, K. Barla, and J.C. Pfister, Pore Size Distribution in Porous Silicon studied by Absorption Isotherms, J. Electrochem. Soc. 130, 1611 (1983).

    CAS  Article  Google Scholar 

  14. 14

    F. Secco d’Aragona, J. Electrochem. Soc. 119, 948 (1972).

    Article  Google Scholar 

  15. 15

    I. Pelant, A. Fejfar, and J. Kocka, in Structural and Optical Properities of Porous Silicon Nanostructures, edited by G. Amato, C. Delerue and H.J. Bardeleben (Overseas Publishers Association, Amsterdam, 1997), p.253.

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to Titus J. Rinke.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Rinke, T.J., Bergmann, R.B. & Werner, J.H. Structure and Properties of Quasi-Monocrystalline Silicon Thin-Films. MRS Online Proceedings Library 558, 251–256 (1999). https://doi.org/10.1557/PROC-558-251

Download citation