Properties of Electron Emitting Diode Fabricated with Single-Crystalline Diamond

Abstract

Highly efficient electron emitting diodes have been fabricated using single-crystalline diamond films epitaxially grown on high-pressure synthesized (100) diamond. These diodes have an internal electrode of a graphitized layer buried below an overgrown diamond layer with a very high resistivity, the structure of which is formed by a combination of heavy ionimplantation and overgrowth techniques. The efficiency of electron emissions from sufficiently hydrogenated p-type diamond surfaces reached 100% in the best case. It is found that H atoms can passivate internal defects created during the ion implantation process. The mechanism of the high efficiency is discussed in relation to electron-hole creations in the thin diamond layer under extremely high electric fields of 107 V/cm.

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Correspondence to Toshimichi Ito.

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Ito, T., Nishimura, M. Properties of Electron Emitting Diode Fabricated with Single-Crystalline Diamond. MRS Online Proceedings Library 558, 105–110 (1999). https://doi.org/10.1557/PROC-558-105

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