Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy

Abstract

InGaN alloys with indium compositions ranging from 0-40% have been grown by molecular beam epitaxy. The dependence of the indium incorporation on growth temperature and group III/group V ratio has been studied. Scanning tunneling microscopy images, interpreted using first-principles theoretical computations, show that there is strong indium surface segregation on InGaN. Based on this surface segregation, a qualitative model is proposed to explain the observed indium incorporation dependence on the growth parameters.

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Correspondence to Huajie Chen.

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Chen, H., Smith, A.R., Feenstra, R.M. et al. Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy. MRS Online Proceedings Library 537, 950 (1998). https://doi.org/10.1557/PROC-537-G9.5

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