Uniformity and Performance Characterization of GaN P-I-N Photodetectors Fabricated From 3-Inch Epitaxy

Abstract

Gallium nitride wafer epitaxy on large diameter substrates is critical for the future fabrication of large area UV linear or 2D imaging arrays, as well as for the economical production of other GaN-based devices. Typical group III-nitride deposition is now performed on 2-inch diameter or smaller sapphire substrates. Reported here are visible blind, UV GaN p-in photodetectors which have been fabricated on 3-inch diameter (0001) sapphire substrates by RF atomic nitrogen plasma MBE. The uniformity across the wafer of spectral responsivity and shunt resistance (R0) for the p-i-n photodetectors has been characterized. Spectral responsivity and 1/f noise as a function of temperature exceeding 250°C will be presented for the GaN p-i-n photodetectors. Spectral response with >0.17 A/W at peak wavelength and having 4-6 orders of magnitude visible rejection has been achieved. 1/f noise typically less than 10-14 A/Hz1/2 at room temperature also has been achieved with GaN p-i-n photodiodes. The results have been correlated with proposed models for dark current and 1/f noise in GaN diodes.

This is a preview of subscription content, access via your institution.

References

  1. 1.

    G. Xu, A. Salvador, A. E. Botchkarev, W. Kim, C. Lu, H. Tang, H. Morkoc, G. Smith, M. Estes, T. Dang, and P. Wolf in Materials Science Forum, Part 2 (264-268, Trans Tech, Enfield, NH, 1998) pp. 1441–1444.

    CAS  Article  Google Scholar 

  2. 2.

    D. V. Kuksenkov, H. Temkin, A. Osinsky, R. Gaska, and M. A. Khan, in 1997 International Electron Devices Meeting Technical Digest (EEE, Piscataway, NJ, 1997) pp. 759–762.

    Google Scholar 

  3. 3.

    A. Osinsky, S. Gangopadhyay, R. Gaska, B. Williams, and M. A. Khan, Appl. Phys. Lett. 71 (16), 2334 (1997).

    CAS  Article  Google Scholar 

  4. 4.

    J. M. Van Hove, G. J. Cosimini, E. Nelson, A. M. Wowchak, and P. P. Chow, J. Cryst. Growth 150, 908 (1995).

    Article  Google Scholar 

  5. 5.

    J. M. Van Hove, P. P. Chow, R. Hickman, A. M. Wowchak, J. J. Klaassen, and C. J. Polley in III-V Nitrides, edited by F. A. Ponce, T. D. Moustakas, I. Akasaki, and B. A. Monemar (Mater. Res. Soc. Proc. 449, Pittsburgh, PA, 1996) pp. 1227–1231.

    Google Scholar 

  6. 6.

    J. M. Van Hove, R. Hickman, J. J. Klaassen, and P. P. Chow, Appl. Phys. Lett. 70 (17), 2282 (1997).

    Article  Google Scholar 

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to R. Hickman II.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Hickman, R., Klaassen, J.J., Van Hove, J.M. et al. Uniformity and Performance Characterization of GaN P-I-N Photodetectors Fabricated From 3-Inch Epitaxy. MRS Online Proceedings Library 537, 76 (1998). https://doi.org/10.1557/PROC-537-G7.6

Download citation