Physics-Based Intrinsic Model for AlGaN/GaN HEMTs

Abstract

DC and intrinsic small signal parameters are reported for AlGaN/GaN high electron mobility transistors. The calculations are based upon a self-consistent solution of Schrödinger and Poisson’s equation to model the quantum well formed in GaN. Transport parameters are obtained from an ensemble Monte Carlo simulation.

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References

  1. [1].

    S. C. Binari, J. M. Redwing, G. Kelner and W. Kruppa, Electron. Lett., vol. 33, No. 3, p. 242, 1997.

    CAS  Article  Google Scholar 

  2. [2].

    S. C. Binari, Electrochem. Soc. Proc., 95-21, p. 136, 1995.

    CAS  Google Scholar 

  3. [3].

    J. M. Redwing, M. A. Tischler, J. S. Flynn, S. Elhamri, M. Ahoujja, R. S. Newrock and W. C. Mitchel, Appl. Phys. Lett., vol. 69, p. 963, 1996

    CAS  Article  Google Scholar 

  4. [4].

    P. M. Asbeck, E. T. Yu, S. S. Lau, G. J. Sullivan, J. Van Hove and J. Redwing, Electron. Lett., p. 241, Aug. 1997.

    Google Scholar 

  5. [5].

    R. T. Webster and A.F.M. Anwar, MRS Proc. vol. 428, p.929, 1997.

    Article  Google Scholar 

  6. [6].

    M. A. Khan, Q. Chen, M. S. Shur, B. T. Dermott and J. A. Higgins, IEEE Electron Dev. Lett., vol. 17, No.7, p. 325, 1996.

    CAS  Article  Google Scholar 

  7. [7].

    M. S. Shur and M. A. Khan, MRS Bull., p. 44, Feb., 1997

  8. [8].

    J. M. Redwing, M. A. Tischler, J. S. Flynn, S. Elhamri, M. Ahoujja, R. S. Newrock and W. C. Mitchel, Appl. Phys. Lett., vol. 69, p. 963, 1996

    CAS  Article  Google Scholar 

  9. [9].

    S. Strite and H. Morkoc, J. Vac. Sci. Technol., vol. B 10, No. 4, p. 1237, 1992.

    Article  Google Scholar 

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Correspondence to Shangli Wu.

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Wu, S., Webster, R.T. & Anwar, A.F.M. Physics-Based Intrinsic Model for AlGaN/GaN HEMTs. MRS Online Proceedings Library 537, 658 (1998). https://doi.org/10.1557/PROC-537-G6.58

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