Physics-Based Intrinsic Model for AlGaN/GaN HEMTs

MRS Online Proceedings Library volume 537, Article number: 658 (1998) Cite this article

Abstract

DC and intrinsic small signal parameters are reported for AlGaN/GaN high electron mobility transistors. The calculations are based upon a self-consistent solution of Schrödinger and Poisson’s equation to model the quantum well formed in GaN. Transport parameters are obtained from an ensemble Monte Carlo simulation.

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Affiliations

  1. Electrical and Systems Engineering Department, University of Connecticut, Storrs, CT, 06269-2157, USA

    Shangli Wu & A. F. M. Anwar

  2. Electromagnetics Technology Division, Air Force Research Laboratory, Hanscom AFB, MA, 01730, USA

    Richard T. Webster

Authors
  1. Shangli Wu
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  2. Richard T. Webster
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  3. A. F. M. Anwar
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Correspondence to Shangli Wu.

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Wu, S., Webster, R.T. & Anwar, A.F.M. Physics-Based Intrinsic Model for AlGaN/GaN HEMTs. MRS Online Proceedings Library 537, 658 (1998). https://doi.org/10.1557/PROC-537-G6.58

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