Inductively Coupled Plasma Etching of III-Nitrides in Cl2/Xe, Cl2/Ar AND Cl2/He

Abstract

The role of additive noble gases He, Ar and Xe to Cl2-based Inductively Coupled Plasmas for etching of GaN, AIN and InN were examined. The etch rates were a strong function of chlorine concentration, rf chuck power and ICP source power. The highest etch rates for InN were obtained with Cl2/Xe, while the highest rates for AIN and GaN were obtained with Cl2/He. Efficient breaking of the III-nitrogen bond is crucial for attaining high etch rates. The InN etching was dominated by physical sputtering, in contrast to GaN and AIN. In the latter cases, the etch rates were limited by initial breaking of the III-nitrogen bond. Maximum selectivities of ≈ 80 for InN to GaN and InN to AIN were obtained.

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References

  1. 1.

    R. J. Shul, G. B. McClellan, S. A. Casalnuova, D. J. Rieger, S. J. Pearton, C. Constantine, C. Barrat, R. F. Karlicek Jr, C. Tran, and M. Schurman, Appl. Phys. Lett., 69 1119 (1996).

    CAS  Article  Google Scholar 

  2. 2.

    R. J. Shul, in GaN and Related Materials, ed. S. J. Pearton (Gordon and Breach, N. Y., 1997).

  3. 3.

    H. P. Gillis, D. A. Choutov, and K. P. Martin, JOM, 48 50 (1996).

    CAS  Article  Google Scholar 

  4. 4.

    I. Adesida, A. Mahajan, E. Andideh, M. A. Khan, D. T. Olsen, and J. N. Kuznia, Appl. Phys. Lett., 63 2777 (1993).

    CAS  Article  Google Scholar 

  5. 5.

    M. E. Lin, Z. F. Fan, Z. Ma, L. H. Allen, and H. Morkoc, Appl. Phys. Lett., 64 887 (1994).

    CAS  Article  Google Scholar 

  6. 6.

    H. Lee, D. B. Oberman, and J. S. Harris Jr, Appl. Phys. Lett., 67 1754 (1995).

    CAS  Article  Google Scholar 

  7. 7.

    W. Pletschen, R. Niegurch, and K. H. Bachem, Proc. Symp. Wide Bandgap Semiconductors and Devices, Vol. 95-21 (Electorchemcal Society, Pennington, N. J., 1995), p. 241.

    CAS  Google Scholar 

  8. 8.

    S. J. Pearton, C. R. Abernathy, and F. Ren, Appl. Phys. Lett., 64 2294 (1994).

    CAS  Article  Google Scholar 

  9. 9.

    L. Zhang, J. Ramer, J. Brown, K. Zhang, L.F. Lester, and S. D. Hersee, Appl. Phys. Lett., 68 367 (1996).

    CAS  Article  Google Scholar 

  10. 10.

    R. J. Shul, R. D. Briggs, S. J. Pearton, C. B. Vartuli, C. R. Abernathy, J. W. Lee, C. Constantine, and C. Barratt, Mat. Res. Soc. Symp. Proc., 449 969 (1997).

    CAS  Article  Google Scholar 

  11. 11.

    H. Cho, C. B. Vartuli, S. M. Donovan, C. R. Abernathy, S. J. Pearton, R. J. Shul, and C. Constantine, J. Vac. Sci. Technol. A 16 1631 (1998).

    Article  Google Scholar 

  12. 12.

    H. Cho, C. B. Vartuli, S. M. Donovan, K. D. Mackenzie, C. R. Abernathy, S. J. Pearton, R. J. Shul, and C. Constantine, J. Electron. Mat., 27 166 (1998).

    CAS  Article  Google Scholar 

  13. 13.

    S. Nakamura, in GaN and Related Materials, ed. S. J. Pearton (Gordon and Breach, N. Y. 1997).

  14. 14.

    O. Aktas, Z. Fan, S. N. Mohammad, A. Botcharev, and H. Morkoc, Appl. Phys. Lett., 69 25 (1996).

    Article  Google Scholar 

  15. 15.

    M. A. Khan, J. N. Kuznia, M. S. Shur, C. Eppens, J. Burm, and W. Schaff, Appl. Phys. Lett., 66 1083 (1995).

    CAS  Article  Google Scholar 

  16. 16.

    Y. F. Wu, B. P. Keller, S. Keller, D. Kapolnek, S. D. Den Baars, and U. K. Mishra, IEEE Electron. Dev. Lett., 17 455 (1996).

    CAS  Article  Google Scholar 

  17. 17.

    M. A. Khan, Q. Chen, M. S. Shur, B. T. McDermott, J. A. Higgins, J. Burm, W. Schaff, and L. F. Eastman, Elecrtron. Lett., 32 357 (1996).

    CAS  Article  Google Scholar 

  18. 18.

    Y. T. Wu, S. Keller, P. Kozodoy, B. P. Keller, P. Parikh, D. Kapolnek, S. P. Denbaars, and V. K. Mishra, IEEE Electron. Dev. Lett., 18 290 (1997).

    CAS  Article  Google Scholar 

  19. 19.

    C. R. Abernathy, J. Vac. Sci. Technol. A 11 869 (1993).

    Article  Google Scholar 

  20. 20.

    C. R. Abernathy, Mat. Sci. Eng. Rep., R14 203 (1995).

    CAS  Article  Google Scholar 

  21. 21.

    J. W. Lee, J. Hong, and S. J. Pearton, Appl. Phys. Lett., 68 847 (1996).

    CAS  Article  Google Scholar 

  22. 22.

    CRC Handbook of Chemistry and Physics, 70th Ed., eds. R. C. Weast, D. R. Lide, M. J. Astle, and W. H. Beyer (CRC Press Inc., Boca Raron, FL, 1989).

    Google Scholar 

  23. 23.

    J. Burm, K. Chu, W. J. Schaff, L. F. Eastman, M. A. Khan, Q. Chen, J. W. Yang, and M. S. Shur, IEEE Electron. Dev. Lett., 18 141 (1997).

    CAS  Article  Google Scholar 

  24. 24.

    S. M. Donovan, K. D. MacKenzie, C. R. Abernathy, S. J. Pearton, F. Ren, K. Jones, and M. Cole, Appl. Phys. Lett., 70 2592 (1997).

    CAS  Article  Google Scholar 

  25. 25.

    F. Ren, C. R. Abernathy, S. J. Pearton, and P. W. Wisk, Appl. Phys. Lett., 64 1508 (1994).

    CAS  Article  Google Scholar 

  26. 26.

    F. Ren, R. J. Shul, C. R. Abernathy, S. N. G. Chu, J. R. Lothian, and S. J. Pearton, Appl. Phys. Lett., 66 1503 (1995).

    CAS  Article  Google Scholar 

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Correspondence to Hyun Cho.

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Cho, H., Hahn, Y.B., Hays, D.C. et al. Inductively Coupled Plasma Etching of III-Nitrides in Cl2/Xe, Cl2/Ar AND Cl2/He. MRS Online Proceedings Library 537, 656 (1998). https://doi.org/10.1557/PROC-537-G6.56

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