GaN P-N Structures Fabricated by Mg ION Implantation

Abstract

In this paper we report on the first GaN p-n diodes fabricated by Mg ion implantation doping of n-type GaN epitaxial layers. Ion implantation was performed at room temperature. Implantation dose ranged from 1013 to 2 × 1016 cm2. After implantation samples were annealed for 10-15 s at a wide temperature interval from 600°C to 1200°C in flowing N2 to form p-type layers. Secondary ion mass spectroscopy, scanning electron microscopy with electron beam induced current and back scattered electron modes as well as current-voltage and capacitance-voltage measurements were used to study structural and electrical characteristics of the Mg implanted p-n structures.

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Correspondence to E. V. Kalinina.

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Kalinina, E.V., Solov’ev, V.A., Zubrilov, A.S. et al. GaN P-N Structures Fabricated by Mg ION Implantation. MRS Online Proceedings Library 537, 653 (1998). https://doi.org/10.1557/PROC-537-G6.53

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