Extrinsic Performance Limitations of AlGaN/GaN Heterostructure Field Effect Transistors

Abstract

Extrinsic effects on the DC output characteristics of AlGaN/GaN HFETs with 1μm gate lengths are examined. The devices investigated were fabricated on MOCVD-grown AlGaN/GaN heterostructures on sapphire substrates. An analytical model that takes into account parasitic resistances and thermal effects is constructed, and its results are compared with experimental data. With parameters determined from characterization experiments on the same wafer and from independent theoretical results, the agreement between the data and the model predictions is found to be very good. The model is then applied to performance predictions for devices with improved series resistances and heat sinking.

This is a preview of subscription content, access via your institution.

References

  1. 1.

    N.X. Nguyen, C. Nguyen, and D.E. Grider, Electronics Lett., 34, 811 (1998).

    CAS  Article  Google Scholar 

  2. 2.

    G.J. Sullivan, J.A. Higgins, M.Y. Chen, J.W. Yang, Q. Chen, R.L. Pierson, and B.T. McDermott, Electronics Lett., 34, 922 (1998).

    CAS  Article  Google Scholar 

  3. 3.

    S.T. Sheppard, K. Doverspike, W.L. Pribble, S.T. Allen, J.W. Palmour, L.T. Kehias, and T.J. Jenkins, Abstracts of 1998 Device Research Conference, Charlottesville, VA (1998).

    Google Scholar 

  4. 4.

    P.P. Ruden, IEEE Trans. Electron Devices, 37, 2267 (1990).

    Article  Google Scholar 

  5. 5.

    J.D. Albrecht, R.P. Wang, P.P. Ruden, M. Farahmand, and K.F. Brennan, J. Appl. Phys., 83, 4777 (1998).

    CAS  Article  Google Scholar 

  6. 6.

    M. Shur, Physics of Semiconductor Devices, Prentice-Hall, Inc., Englewood Cliffs, NJ (1990).

    Google Scholar 

  7. 7.

    T. Ando, A.B. Fowler, F. Stern, Rev. Mod. Phys., 54, 437 (1982).

    CAS  Article  Google Scholar 

  8. 8.

    P.P. Ruden, M. Shur, A.I. Akinwande, J.C. Nohava, D.E. Grider, and J. Baek, IEEE Trans. Electron Devices, 37, 2171 (1990).

    CAS  Article  Google Scholar 

  9. 9.

    K. Ikossi-Anastasiou, A. Ezis, and A.K. Rai, IEEE Trans. Electron Devices, 35, 1786 (1988).

    CAS  Article  Google Scholar 

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to P. P. Ruden.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Ruden, P.P., Albrecht, J.D., Sutandi, A. et al. Extrinsic Performance Limitations of AlGaN/GaN Heterostructure Field Effect Transistors. MRS Online Proceedings Library 537, 635 (1998). https://doi.org/10.1557/PROC-537-G6.35

Download citation