Rapid Thermal Processing of Implanted GaN Up to 1500°C

Abstract

GaN implanted with donor(Si, S, Se, Te) or acceptor (Be, Mg, C) species was annealed at 900-1500°C using AIN encapsulation. No redistribution was measured by SIMS for any of the dopants and effective diffusion coefficients are ≤2×10-13 cm2 s-1 at 1400°C, except Be, which displays damage-enhanced diffusion at 900°C and is immobile once the point defect concentration is removed. Activation efficiency of ≈90% is obtained for Si at 1400°C. TEM of the implanted material shows a strong reduction in lattice disorder at 1400-1500°C compared to previous results at 1100°C. There is minimal interaction of the sputtered AIN with GaN under our conditions, and it is readily removed selectively with KOH.

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Correspondence to X. A. Cao.

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Cao, X.A., Pearton, S.J., Singh, R.K. et al. Rapid Thermal Processing of Implanted GaN Up to 1500°C. MRS Online Proceedings Library 537, 633 (1998). https://doi.org/10.1557/PROC-537-G6.33

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