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Rapid Thermal Processing of Implanted GaN Up to 1500°C

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Abstract

GaN implanted with donor(Si, S, Se, Te) or acceptor (Be, Mg, C) species was annealed at 900-1500°C using AIN encapsulation. No redistribution was measured by SIMS for any of the dopants and effective diffusion coefficients are ≤2×10-13 cm2 s-1 at 1400°C, except Be, which displays damage-enhanced diffusion at 900°C and is immobile once the point defect concentration is removed. Activation efficiency of ≈90% is obtained for Si at 1400°C. TEM of the implanted material shows a strong reduction in lattice disorder at 1400-1500°C compared to previous results at 1100°C. There is minimal interaction of the sputtered AIN with GaN under our conditions, and it is readily removed selectively with KOH.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, USA

    X. A. Cao, S. J. Pearton, R. K. Singh & C. R. Abernathy

  2. Sandia National Laboratories, Albuquerque, NM, 87185, USA

    J. Han, R. J. Shul & D. J. Rieger

  3. Office of Naval Research, Arlington, VA, 22217, USA

    J. C. Zolper

  4. Consultant, Stevenson Ranch, CA, 91381, USA

    R. G. Wilson & M. Fu

  5. Micropyretics Heaters International, Inc., Cincinnati, OH, 45215, USA

    J. A. Sekhar

  6. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA

    H. J. Guo & S. J. Pennycook

Authors
  1. X. A. Cao
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  2. S. J. Pearton
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  3. R. K. Singh
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  4. C. R. Abernathy
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  5. J. Han
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  6. R. J. Shul
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  7. D. J. Rieger
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  8. J. C. Zolper
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  9. R. G. Wilson
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  10. M. Fu
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  11. J. A. Sekhar
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  12. H. J. Guo
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  13. S. J. Pennycook
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Cao, X.A., Pearton, S.J., Singh, R.K. et al. Rapid Thermal Processing of Implanted GaN Up to 1500°C. MRS Online Proceedings Library 537, 633 (1998). https://doi.org/10.1557/PROC-537-G6.33

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  • DOI: https://doi.org/10.1557/PROC-537-G6.33

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