Electrical Characterization of Defects Introduced in n-GaN During High Energy Proton and He-Ion Irradiation

Abstract

We report on the electrical properties of defects as determined by deep level transient spectroscopy (DLTS) introduced in epitaxially grown n-GaN by 2.0 MeV protons and 5.4 MeV He-ions. After He-ion bombardment three electron traps ER3 (Ec - 0.196 eV), ER4 (Ec - 0.78 eV), and ER5 (Ec - 0.95 eV) were introduced uniformly in the region profiled by DLTS with introduction rates of 3270 ± 200, 1510 ± 300, and 3030 ± 500 cm-1 respectively. Capture cross section measurements revealed that the electron capture kinetics of ER5 is similar to that of a line defect. A defect with similar electronic properties as ER3 is observed after 2.0 MeV proton irradiation. The emission rate of ER3 depends on the electric field strength in the space-charge region. This emission rate is modelled according to the Poole-Frenkel distortion of a square well with a radius of 20 ± 2 Å or alternatively, a Gaussian well with a characteristic width of 6.0 ± 1 Å. Hence, we conclude that ER1 is a point defect which appears to have an acceptor like character. Two additional electron traps, ER1 (Ec -0.13 eV) and ER2 (Ec - 0.16eV) with introduction rates of 30 ± 10 and 600 ± 100 cm-1 not thusfar observed after electron or He-ion bombardment were observed after proton irradiation.

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References

  1. [1]

    K. Doverspike, A. E. Wickenden, S. C. Binarii, D. K. Gaskill and J. A. Freitas, Mat. Res. Soc. Symp. Proc. Vol. 395, p 897 (1996).

    CAS  Article  Google Scholar 

  2. [2]

    S. Nakamura and G. Fasol, in “The blue laser diode”, (Springer Verlag, 1997).

    Google Scholar 

  3. [3]

    M. Lambsdorff, J. Kohl, J. Rosenzweig, A. Axmann and J. Schneider, Appl. Phys. Lett. 58, 1881 (1991).

    CAS  Article  Google Scholar 

  4. [4]

    V. M. Rao, W-P Hong, C. Caneau, G-K. Chang, N. Papanicolaou, and H. B. Dietrich, J. Appl. Phys. 70, 3943 (1991).

    CAS  Article  Google Scholar 

  5. [5]

    M. Linde, S.J. Uftring, G.D. Watkins, V. Harle and F. Scholz, Phys. Rev. B 55, R10177 (1997).

    CAS  Article  Google Scholar 

  6. [6]

    D.C. Look, D.C. Reynolds, J.W. Hemsky, J.R. Sizelove, R.L. Jones and R.J. Molnar, Phys. Rev. Lett. 79, 2273 (1997).

    CAS  Article  Google Scholar 

  7. [7]

    Z-Q. Fang, D. C. Look, W. Kim, Z. Fan, A. Botchkarev and H. Morkoc, Appl. Phys. Lett. 72, 2277 (1998).

    CAS  Article  Google Scholar 

  8. [8]

    P. Hacke, T. Detchprohm, K. Hiramatsu, and N. Sawaki, Appl. Phys. Lett. 63, 2676 (1993).

    CAS  Article  Google Scholar 

  9. [9]

    J.K. Sheu, Y.K. Su, G.C. Chi, W.C. Chen, C.Y. Chen, C.N. Huang, J.M. Hong, Y.C. Yu, C.W. Wang, and E.K. Lin, J. Appl. Phys. 83, 3172 (1998).

    CAS  Article  Google Scholar 

  10. [10]

    S. Ruminov, Z. Liliental-Weber, J. Washburn, K.J. Duxstad, E.E. Hailer, Z.-F. Fan, S.N Mohammed, W. Kim, A.E. Botchkarev, and H. Morkoc, Appl. Phys. Lett. 69, 1556 (1996).

    Article  Google Scholar 

  11. [11]

    P. Hacke, T. Detchprohm, K. Hiramatsu and N. Sawaki, Appl. Phys. Lett. 63, 2676, (1993).

    CAS  Article  Google Scholar 

  12. [12]

    W. Götz, N. M. Johnson, H. Amano and I. Akasaki, Appl. Phys. Lett. 65, 463 (1994).

    Article  Google Scholar 

  13. [13]

    J. Neugebauer and C.G. Van de Walle, Phys. Rev. B 50, 8067 (1994).

    Article  Google Scholar 

  14. [14]

    T. Mattila, A.P. Seitsonen and R.M. Nieminen, Phys. Rev. B 54, 1474 (1996).

    CAS  Article  Google Scholar 

  15. [15]

    T. Wosinski, J. Appl. Phys. 65, 1566 (1988).

    Article  Google Scholar 

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Correspondence to S. A. Goodman.

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Goodman, S.A., Auret, F.D., Koschnick, F.K. et al. Electrical Characterization of Defects Introduced in n-GaN During High Energy Proton and He-Ion Irradiation. MRS Online Proceedings Library 537, 612 (1998). https://doi.org/10.1557/PROC-537-G6.12

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