The Behavior of Ion-Implanted Hydrogen in Gallium Nitride


Hydrogen was ion-implanted into wurtzite-phase GaN, and its transport, bound states, and microstructural effects during annealing up to 980°C were investigated by nuclear-reaction profiling, ion-channeling analysis, transmission electron microscopy, and infrared (IR) vibrational spectroscopy. At implanted concentrations vl at.%, faceted H 2 bubbles formed, enabling identification of energetically preferred surfaces, examination of passivating N-H states on these surfaces, and determination of the diffusivity-solubility product of the H. Additionally, the formation and evolution of point and extended defects arising from implantation and bubble formation were characterized. At implanted H concentrations 0.1 at.%, bubble formation was not observed, and ion-channeling analysis indicated a defect-related H site located within the [0001] channel.

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  1. 1.

    J.M. Zavada, R.G. Wilson, C.R. Abernathy, and S.J. Pearton, Appl. Phys. Lett. 64, 2724 (1994).

    CAS  Article  Google Scholar 

  2. 2.

    M.G. Weinstein, C.Y. Song, M. Stavola, S.J. Pearton, R.G. Wilson, R.J. Shul, K.P. Killeen, and M.J. Ludowise, Appl. Phys. Lett. 72, 1703 (1998).

    CAS  Article  Google Scholar 

  3. 3.

    S.J. Pearton, R.G. Wilson, J.M. Zavada, J. Han, and R.J. Shul, Appl. Phys. Lett. 73, 1877 (1998).

    CAS  Article  Google Scholar 

  4. 4.

    W.R. Wampler and S.M. Myers, MRS Internet J. Nitride Semicond. Res. 4S1, G3.73 (1999).

    Google Scholar 

  5. 5.

    C.H. Seager, S.M. Myers, G.A. Petersen, J. Han, and T.J. Headley, J. Appl. Phys., in press.

  6. 6.

    T.-B. Ng, J. Han, R.M. Biefeld, and M.V. Weckwerth, J. Electron. Mater. 27, 190 (1998).

    CAS  Article  Google Scholar 

  7. 7.

    W. Möller and F. Besenbacher, Nucl. Instrum. Meth. 168, 111 (1980).

    Article  Google Scholar 

  8. 8.

    S. M. Myers, G. R. Caskey Jr, D. E. Rawl Jr, and R. D. Sisson Jr, Metall. Trans. A 14, 2261 (1983).

    Article  Google Scholar 

  9. 9.

    Ion ranges were calculated using the TRIM-90 Monte-Carlo code described by J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, New York, 1985), and by J. F. Ziegler, 1990, unpublished.

    Google Scholar 

  10. 10.

    J. F. Ziegler, Helium Stopping Powers and Ranges in All Elements (Pergamon, New York, 1977).

    Google Scholar 

  11. 11.

    F. A. Ponce, D. P. Bour, W. T. Young, M. Saunders, and J. W. Steeds, Appl. Phys. Lett. 69, 337 (1996).

    CAS  Article  Google Scholar 

  12. 12.

    B. Daudin, J. L. Rouvière, and M. Arlery, Appl. Phys. Lett. 69, 2480 (1996).

    CAS  Article  Google Scholar 

  13. 13.

    M. Seelmann-Eggebert, J. L. Weyher, H. Obloh, H. Zimmermann, A. Rar, and S. Porowski, Appl. Phys. Lett. 71, 2635 (1997).

    CAS  Article  Google Scholar 

  14. 14.

    Z. Liliental-Weber, O. Richter, J. Washburn, K. Pakula, J. Baranowski, I. Grzegory, S. Porowski, and J. Y. Yang, reported at the 1998 Spring Meeting of the Materials Research Society.

  15. 15.

    J. Neugebauer and C. G. Van de Walle, Phys. Rev. Lett. 75, 4452 (1995).

    CAS  Article  Google Scholar 

  16. 16.

    A.F Wright, to be published.

  17. 17.

    Z. Liliental-Weber, C. Kisielowski, S. Ruvimov, Y. Chen, J. Washburn, I. Grzegory, M. Bockowski, J. Jun, and S. Porowski, J. Electron. Mater. 25, 1545 (1996).

    CAS  Article  Google Scholar 

  18. 18.

    M.J. Stavola, private communication.

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Myers, S.M., Headley, T.J., Hills, C.R. et al. The Behavior of Ion-Implanted Hydrogen in Gallium Nitride. MRS Online Proceedings Library 537, 58 (1998).

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