The Behavior of Ion-Implanted Hydrogen in Gallium Nitride

Abstract

Hydrogen was ion-implanted into wurtzite-phase GaN, and its transport, bound states, and microstructural effects during annealing up to 980°C were investigated by nuclear-reaction profiling, ion-channeling analysis, transmission electron microscopy, and infrared (IR) vibrational spectroscopy. At implanted concentrations vl at.%, faceted H 2 bubbles formed, enabling identification of energetically preferred surfaces, examination of passivating N-H states on these surfaces, and determination of the diffusivity-solubility product of the H. Additionally, the formation and evolution of point and extended defects arising from implantation and bubble formation were characterized. At implanted H concentrations 0.1 at.%, bubble formation was not observed, and ion-channeling analysis indicated a defect-related H site located within the [0001] channel.

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Myers, S.M., Headley, T.J., Hills, C.R. et al. The Behavior of Ion-Implanted Hydrogen in Gallium Nitride. MRS Online Proceedings Library 537, 58 (1998). https://doi.org/10.1557/PROC-537-G5.8

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