Role of the Substitutional Oxygen Donor in the Residual N-Type Conductivity in GaN

MRS Online Proceedings Library volume 537, Article number: 54 (1998) Cite this article

Abstract

A detailed photoluminescence (PL) study reveals a striking similarity in local vibrational properties of a defect center in GaN as compared to that for the substitutional Op donor in GaP. This observation could be interpreted as if the center is in fact related to the substitutional oxygen donor in GaN. The deep-level nature experimentally determined for the defect center calls for caution of a commonly referred model that the substitutional oxygen donor is responsible for the residual n-type conductivity in GaN.

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Affiliations

  1. Department of Physics and Measurement Technology, Linköping University, S-581 83, Linköping, Sweden

    W. M. Chen, I. A. Buyanova, Mt. Wagner & B. Monemar

  2. Swedish Defense Research Establishment, Box 1165, S-581 11, Linköping, Sweden

    J. L. Lindstrom

  3. Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468, Japan

    H. Amano & I. Akasaki

Authors
  1. W. M. Chen
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  2. I. A. Buyanova
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  3. Mt. Wagner
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  4. B. Monemar
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  5. J. L. Lindstrom
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  6. H. Amano
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  7. I. Akasaki
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Correspondence to W. M. Chen.

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Chen, W.M., Buyanova, I.A., Wagner, M. et al. Role of the Substitutional Oxygen Donor in the Residual N-Type Conductivity in GaN. MRS Online Proceedings Library 537, 54 (1998). https://doi.org/10.1557/PROC-537-G5.4

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