Role of the Substitutional Oxygen Donor in the Residual N-Type Conductivity in GaN

Abstract

A detailed photoluminescence (PL) study reveals a striking similarity in local vibrational properties of a defect center in GaN as compared to that for the substitutional Op donor in GaP. This observation could be interpreted as if the center is in fact related to the substitutional oxygen donor in GaN. The deep-level nature experimentally determined for the defect center calls for caution of a commonly referred model that the substitutional oxygen donor is responsible for the residual n-type conductivity in GaN.

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References

  1. 1.

    J. Neugebauer, C. G. Van de Walle, “Atomic geometry and electronic structure of native defects in GaN”, Phys. Rev. B 50 (11), 8067 (1994).

    CAS  Article  Google Scholar 

  2. 2.

    Jörg Neugebauer and Chris G. Van de Walle, “Gallium vacancies and the yellow luminescence in GaN”, Appl. Phys. Lett. 69 (4), 503 (1996).

    Article  Google Scholar 

  3. 3.

    G. Wetzel, T. Suski, J. W. Ager, E. R. Weber, E. E. Haller, S. Fischer, B. K. Meyer, R. J. Molnar, P. Perlin, “Pressure induced deep gap state of oxygen in GaN”, Phys. Rev. Lett. 78 (20), 3923 (1997).

    CAS  Article  Google Scholar 

  4. 4.

    M. Linde, S. F. Uftring, G. D. Watkins, V. Härle and F. Scholz, “Optical detection of magnetic resonance in electron-irradiated GaN”, Phys. Rev. B 55, R10177 (1997).

    CAS  Article  Google Scholar 

  5. 5.

    For a review, see e.g. P.J. Dean “Oxygen in GaP” in “Deep Centers in Semiconductors” ed. S.T. Pantelides (Gordon and Breach Science Pub. New York, 1986) p. 185; P.J. Dean and C.H. Henry, Phys. Rev. 176, 928 (1968).

    Google Scholar 

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Correspondence to W. M. Chen.

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Chen, W.M., Buyanova, I.A., Wagner, M. et al. Role of the Substitutional Oxygen Donor in the Residual N-Type Conductivity in GaN. MRS Online Proceedings Library 537, 54 (1998). https://doi.org/10.1557/PROC-537-G5.4

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