Optical Properties of Si-DOPED AlxGal-xN/AlyGal-yN (x=0.24-0.53, y=0.11) Multi-Quantum-Well Structures

MRS Online Proceedings Library volume 537, Article number: 374 (1998) Cite this article

Abstract

We demonstrate strong ultraviolet (UV) (280-330nm) photoluminescence (PL) emission from multi-quantum-well (MQW) structures consisting of AlGaN active layers fabricated by metal-organic chemical-vapor-deposition (MOCVD). Si-doping is shown to be very effective in order to enhance the PL emission of AlGaN QWs. We found that the optimum values of well thickness and Si-doping concentration of AlxGal-xN/AlyGal-yN (x=0.24-0.53, y=0.11) MQW structure for efficient emission were approximately 3nm and 2×1019cm-3, respectively. In addition, the PL intensities of AlGaN, GaN and InGaN quantum well structures are compared. We have found that the PL emission at 77K from a Al0.53Ga0.47N/Al0.11Ga0.89N MQW is as strong as that of InGaN QWs.

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  1. The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako-shi, Saitama, 351-0198, Japan

    H. Hirayama & Y. Aoyagi

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  1. H. Hirayama
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  2. Y. Aoyagi
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Correspondence to H. Hirayama.

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Hirayama, H., Aoyagi, Y. Optical Properties of Si-DOPED AlxGal-xN/AlyGal-yN (x=0.24-0.53, y=0.11) Multi-Quantum-Well Structures. MRS Online Proceedings Library 537, 374 (1998). https://doi.org/10.1557/PROC-537-G3.74

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