Properties of Epitaxial ZnO Thin Films for GaN and Related Applications

Abstract

In this paper, we present a detailed study of high quality (110) ZnO films, epitaxially grown on R-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The epitaxial relationships are (112¯0) ZnO//(011¯2) Al2O3 and {0001} ZnO//[01¯11] A12O3 as confirmed by X-ray diffraction (θ-2θ, and φ-scan) and high-resolution cross-sectional transmission electron microscopy (HR-TEM). Low temperature photoluminescence (PL) indicates the ZnO thin films are almost strain free. Optical absorption and reflection measurements with linearly polarized light indicate a strong optical anisotropy. The polarization rotation towards the C-axis associated with the optical anisotropy is utilized to demonstrate an optically addressed ultra-fast, ultraviolet light modulator.

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Shen, H., Wraback, M., Pamulapati, J. et al. Properties of Epitaxial ZnO Thin Films for GaN and Related Applications. MRS Online Proceedings Library 537, 360 (1998). https://doi.org/10.1557/PROC-537-G3.60

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