Properties of Epitaxial ZnO Thin Films for GaN and Related Applications

MRS Online Proceedings Library volume 537, Article number: 360 (1998) Cite this article

Abstract

In this paper, we present a detailed study of high quality (110) ZnO films, epitaxially grown on R-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The epitaxial relationships are (112¯0) ZnO//(011¯2) Al2O3 and {0001} ZnO//[01¯11] A12O3 as confirmed by X-ray diffraction (θ-2θ, and φ-scan) and high-resolution cross-sectional transmission electron microscopy (HR-TEM). Low temperature photoluminescence (PL) indicates the ZnO thin films are almost strain free. Optical absorption and reflection measurements with linearly polarized light indicate a strong optical anisotropy. The polarization rotation towards the C-axis associated with the optical anisotropy is utilized to demonstrate an optically addressed ultra-fast, ultraviolet light modulator.

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Affiliations

  1. U.S. Army Research Laboratory, Sensors and Electron Devices Directorate, AMSRL-SE-EM, 2800 Powder Mill Rd., Adelphi, MD, 20783-1197, USA

    H. Shen, M. Wraback & J. Pamulapati

  2. Dept. of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ, 08855-0909, USA

    S. Liang, C. Gorla & Y. Lu

Authors
  1. H. Shen
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  2. M. Wraback
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  3. J. Pamulapati
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  4. S. Liang
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  5. C. Gorla
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  6. Y. Lu
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Correspondence to H. Shen.

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Shen, H., Wraback, M., Pamulapati, J. et al. Properties of Epitaxial ZnO Thin Films for GaN and Related Applications. MRS Online Proceedings Library 537, 360 (1998). https://doi.org/10.1557/PROC-537-G3.60

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