Influence of Doping on the Lattice Dynamics of Gallium Nitride

Abstract

We present results of Raman-scattering experiments on GaN doped with Si, C, and Mg, respectively, grown by molecular beam epitaxy (MBE). The influence of the different dopants on strain and free-carrier concentration was investigated. Furthermore, we report on several local vibrational modes (LVM) around 2200 cm-1 in Raman spectra of highly Mg-doped GaN. A possible explanation of these high-energy modes in terms of hydrogen-related vibrations is given. We also found a variety of new structures in the range of the GaN host lattice phonons. Secondary ion mass spectroscopy (SIMS) was applied to determine the concentration of magnesium and unintentionally incorporated hydrogen.

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Correspondence to A. Kaschner.

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Kaschner, A., Siegle, H., Hoffmann, A. et al. Influence of Doping on the Lattice Dynamics of Gallium Nitride. MRS Online Proceedings Library 537, 357 (1998). https://doi.org/10.1557/PROC-537-G3.57

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