Abstract
Thermal residual stresses can detrimentally affect the electronic and optical properties of epitaxial films thereby shortening device lifetime. Based on our earlier work on thermal expansion of nitrides, we provide a finite element modeling analysis of the residual stress distribution of multilayered GaN and AlN on 6H-SiC. The effects of thickness and growth temperatures are considered in the analysis.
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Wang, K., Reeber, R.R. Thermal Residual Stress Modeling in AIN and GaN Multi Layer Samples. MRS Online Proceedings Library 537, 318 (1998). https://doi.org/10.1557/PROC-537-G3.18
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DOI: https://doi.org/10.1557/PROC-537-G3.18