Characterization of Be-Implanted GaN Annealed at High Temperatures

Abstract

Single crystalline (0001) gallium nitride layers were implanted with beryllium and subsequently annealed within the range of 300-1100°C for 10-60 minutes under a flux of atomic nitrogen obtained using a rf plasma source. The nitrogen flux protected the GaN surface from decomposition in vacuum at high temperatures. SIMS measurements revealed that no long range diffusion of the implanted Be occurred at 900 or 1100°C. XRD spectra showed defect-related peaks in the as-implanted samples; these peaks disappeared upon annealing at 900°C and higher for 10 minutes. Photoluminescence (PL) measurements showed one new line at 3.35 eV which provided strong evidence for the presence of optically active Be acceptors.

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Ronning, C., Linthicum, K.J., Carlson, E.P. et al. Characterization of Be-Implanted GaN Annealed at High Temperatures. MRS Online Proceedings Library 537, 317 (1998). https://doi.org/10.1557/PROC-537-G3.17

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