Low-Temperature Homoepitaxial Growth of Gan Using Hyperthermal Molecular Beams

MRS Online Proceedings Library volume 512, pages437–443(1998)Cite this article

Abstract

In situ cleaning of MOCVD-grown GaN/AlN/6H-SiC substrates using NH3-seeded supersonic molecular beams was investigated. Removal of surface carbon and oxygen contaminants was achieved by heating at 730°C under a hyperthermal NH 3 beam. Oxygen is removed primarily by thermal desorption; however, carbon removal requires an NH3 flux. Atomically smooth surfaces with regular steps are obtained after NH3 beam cleaning. Homoepitaxial growth of smooth, highly textured GaN films was accomplished at 700°C by employing a 0.61-eV NH3 beam and an effusive Ga source.

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Affiliations

  1. Department of Chemical Engineering, North Carolina State University, Raleigh, NC, 27695-7905, USA

    A. Michel, E. Chen & H. H. Lamb

  2. Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695-7907, USA

    D. Thomson, O. Nam & R. F. Davis

Authors
  1. A. Michel
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  2. E. Chen
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  3. D. Thomson
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  4. O. Nam
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  5. R. F. Davis
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  6. H. H. Lamb
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Correspondence to A. Michel.

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Michel, A., Chen, E., Thomson, D. et al. Low-Temperature Homoepitaxial Growth of Gan Using Hyperthermal Molecular Beams. MRS Online Proceedings Library 512, 437–443 (1998). https://doi.org/10.1557/PROC-512-437

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